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Features

Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SBB3000 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK RFMD’s SBB3000 is a high performance InGaP HBT MMIC amplifier utiliz- ing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta varia- tions. The SBB3000 product is designed for high linearity 5V gain block applications that require excellent gain flatness, small size, and minimal external components. It is internally matched to 50. Gain and Return Loss VS = 5V, IS = 42mA -30 -20 -10 0123456 Frequency (GHz) dB S11 S21 S22 Bias Tee Data, ZS = ZL = 50 Ohms , TL = 25C  Single Fixed 5V Supply  Patented Self Bias Circuit and Thermal Design  Gain = 16.4dB at 1950MHz  P1dB = 15.2dBm at 1950MHz  OIP3 = 29.5dBm at 1950MHz  Robust 1000V ESD, Class 1C HBM

Applications

 PA Driver Amplifier  RF Pre-Driver and RF Receiver Path  Military Communications  Test and Instrumentation DS120719 Package: Bare Die SBB3000 50MHz to 6000MHz InGaP HBT Active Bias Gain Block Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Gain 16.6 dB 850MHz 16.4 dB 1950MHz 16.3 dB 2400MHz Output Power at 1dB Compression 15.6 dBm 850MHz 15.2 dBm 1950MHz 15.4 dBm 2400MHz Output Third Order Intercept Point 30.0 dBm 850MHz 29.5 dBm 1950MHz 29.5 dBm 2400MHz Input Return Loss 21 dB 1950MHz Output Return Loss 25.5 dB 1950MHz Noise Figure 3.9 dB 1950MHz Device Operating Voltage 4.2 V R DC = 20, VS = 5.0V Device Operating Current 38 42 46 mA R DC = 20, VS = 5.0V Operational Current Range 30 46 mA Per user preference via R DC Thermal Resistance 80 °C/W Junction to lead (89 package) Test Conditions: VD = 4.2V, ID = 42mA, TL = 25°C, OIP3 Tone Spacing = 1MHz, RDC = 20, Bias Tee Data, ZS = ZL = 50, POUT per tone = -5dBm

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB3000 SBB3089Z Typical RF Performance at Key Operating Frequencies (Bias Tee Data) SBB3089Z Typical Performance with Bias Tees, VD = 5V with RDC = 20, ID = 42mA Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD)1 0 0 m A Max Device Voltage (VD)6 V Max RF Input Power* (See Note) +20 dBm Max Junction Temperature (TJ)+ 1 5 0 ° C Operating Temperature Range (TL)- 4 0 t o + 8 5 ° C Max Storage Temperature +150 °C ESD Rating - Human Body Model (HBM) Class 1C *Note: Load condition ZL = 50 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD < (TJ - TL)/RTH, j - l and TL = TLEAD Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2140 MHz 2400 MHz 3500 MHz Test Conditions: VD = 4.2V, ID = 42mA, OIP3 Tone Spacing = 1MHz, POUT per tone = -5dBm, RDC = 20, TL = 25°C, ZS = ZL = 50 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. OIP3 versus Frequency, (-5dBm/tone, 1MHz spacing) 24.0 26.0 28.0 30.0 32.0 34.0 Frequency (GHz) OIP3 (dBm) 25°C -40°C 85°C P1dB versus Frequency 10.0 12.0 14.0 16.0 18.0 20.0 Frequency (GHz) P1dB (dBm) 25°C -40°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB3000 SBB3089Z Typical Performance with Bias Tees, VS = 5V, RDC = 20, ID = 42mA S11 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S11 (dB) 25C -40C 85C S21 versus Frequency 10.0 12.0 14.0 16.0 18.0 20.0 Frequency (GHz) Gain (dB) 25C -40C 85C S12 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S12 (dB) 25C -40C 85C S22 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S22 (dB) 25C -40C 85C NF versus Frequency 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 NF (dB) 25°C 85°C DCIV 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 ID (mA) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB3000 Application Schematic Application Circuit Element Values Reference Designator 500MHz to 3500MHz C1 1000pF C2 68pF L1 48nH 0805HQ Coilcraft Recommended Bias Resistor Values for ID = 42mA, RDC = (VS - VD)/ID Supply Voltage (VS)5 V 6 V 8 V 1 0 V 1 2 V RDC 20 43 91 139 187

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB3000 Die Dimensions Notes: 1. All dimensions in inches [millimeters] 2. Die thickness: 0.004 [0.10] 3. Typical bond pad size is 0.003 x 0.007 4. Backside metallization: Gold 5. Bond pad metallization: Gold 6. Backside is ground

Ordering Information

Pin Names and Descriptions Pin Name Description RF IN RF input. An external DC blocking capacitor chosen for the frequency of operation is required. DIE BACKSIDE Die backside must be connected to RF/DC ground using silver filled conductive epoxy. RF OUT/ DC BIAS RF output and DC bias input. An external DC blocking capacitor chosen for the frequency of operation is required. Part Number Description Container Quantity SBB3000 Bare Die Gel Pack 10 SBB3000S2 Bare Die Gel Pack 2 0.021” [0.52] 0.023” [0.59] RF/g3IN RF/g3OUT DC/g3Bias/g3In