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Technical content
Features
Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SBB1089Z 50MHz to 850MHz, CASCADABLE RFMD’s SBB1089Z is a high performance InGaP HBT MMIC amplifier uti- lizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB1089Z does not require a dropping resistor as compared to typical Darlington amplifi- ers. T he S BB1 0 89Z p r odu ct is d esig ned f o r h igh li near i ty 5V gai n blo ck applications that require small size and minimal external components. It is internally matched to 50. Gain and Return Loss versus Frequency (w/ App. Ckt.) -35 -25 -15 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB S11 S21 S22 S22 S21 S11 OIP3=43. 1dBm at 2 40MHz P1dB=19.6dBm at 500MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C Patented Thermal Design and Bias Circuit Low Thermal Resistance
Applications
Receiver IF Amplifier Cellular, PCS, GSM, UMTS Wireless Data, Satellite Terminals DS130717 Package: SOT-89 Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Gain 15.5 dB 70MHz 14.0 15.5 17.0 dB 240MHz 14.0 15.5 17.0 dB 400MHz Output Power at 1dB Compression 19.0 dBm 70MHz 19.0 dBm 240MHz 18.0 19.0 dBm 400MHz Third Order Intercept Point 42.0 dBm 70MHz 43.0 dBm 240MHz 38.5 40.5 dBm 400MHz Return Loss 50 to 850 MHz Minimum 10dB Input Return Loss 14.0 18.0 dB 70MHz to 5000MHz Output Return Loss 12.0 16.0 dB 70MHz to 5000MHz Noise Figure 3.5 4.2 dB 500MHz Reverse Isolation 18.0 dB 70MHz to 5000MHz Thermal Resistance 48.8 °C/W junction - lead Device Operating Voltage 5.0 5.3 V Device Operating Current 82.0 90.0 98.0 mA Test Conditions: VD=5V , ID=90mA T yp., OIP3 T one Spacing=1MHz, POUT per tone=0dBm, T L=25°C, ZS=ZL=50 , Tested with Bias Tees
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z Typical RF Performance at Key Operating Frequencies (With 240MHz Application Circuit) Absolute Maximum Ratings Parameter Rating Unit Device Current (ID)1 10 mA Device Voltage (VD)5 .5 V RF Input Power 24 dBm Junction Temp (TJ)+ 150 °C Operating Temp Range (TL) -40 to +85 °C Storage Temp +150 °C Power Dissipation 0.61 W ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD<(TJ-TL)/R TH, j-l and TL=TLEAD Parameter Unit 50MHz 70MHz 100 MHz 240 MHz 400 MHz 500 MHz 850 MHz Test Conditions: VCC=5V I D=90mA T yp. OIP3 Tone Spacing=1MHz, P OUT per tone=0dBm T L=25°C ZS=ZL=50 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z Data on Charts taken with 240MHz App. Ckt. Noise Figure versus Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB 25°C -40°C 85°C P1dB versus Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dBm -40°C 25°C 85°C OIP3 versus Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dBm -40°C 25°C 85°C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z S-Parameters over Temperature (Bias Tee) S11 versus Frequency -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB -40°C 25°C 85°C S21 versus Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB -40°C 25°C 85°C S12 versus Frequency -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB -40°C 25°C 85°C S22 versus Frequency -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB -40°C 25°C 85°C Current versus Voltage Over Temperature (Bias Tee) 100 120 Voltage (V) Current (mA) -40C 25C 85C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z 240MHz Application Circuit S-Parameters over Temperature S11 versus Frequency -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (GHz) db -40°C 25°C 85°C S21 versus Frequency 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB -40°C 25°C 85°C S12 versus Frequency -35 -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB -40°C 25°C 85°C S22 versus Frequency -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB -40°C 25°C 85°C Current versus Voltage Over Temperature (App. Ckt.) 100 120 Voltage (V) Current (mA) -40C 25C 85C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z Suggested PCB Pad Layout Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Pin Function Description 1R F I N RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi- ble. 3R F O U T / B I A S RF output and bias pin. DC voltage is present on tis pin, therefore a DC blocking capacitor is necessary for proper opera- tion. Preliminary
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z Application Circuit Element Values Application Schematic Evaluation Board Layout Reference Designator Frequency (MHZ) 50 to 850 CB 8200pF LC 1500nH 0805LS Coilcraft LS 2.7nH Toko RF outRF in Vs Lc 1200pF1uF Cb Cb SBB-1089 Ls t
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBB1089Z Package Marking
Ordering Information
SBB1089Z 7” Reel with 1000 pieces SBB1089ZSQ Sample ba g with 25 pieces SBB1089ZSR 7” Reel with 100 pieces SBB1089ZPCK1 50MHz to 850MHz PCBA with 5-piece sample bag