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Technical content
Features
Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SBA5086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran- sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- nology provides broadband performance u p t o 5 G H z w i t h e x c e l l e n t t h e r m a l performance. The heterojunction increases breakdown voltage and minimizes leak- age current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodu lation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain & Return Loss -30 -25 -20 -15 -10 Frequency (GHz) S21 S22 S11 IP3=34.0dBm at 1950MHz POUT=13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single Supply Patented Thermal Design
Applications
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Terminals DS110722 Package: SOT-86 SBA5086Z Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Gain 17.5 19.0 20.5 dB 850MHz 15.7 17.2 18.7 dB 1950MHz Output Power at 1dB Compression 19.5 dBm 850MHz 18 19.5 dBm 1950MHz Output Third Order Intercept Point 36.9 dBm 850MHz 32.0 34.0 dBm 1950MHz Output Power 13.3 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels Bandwidth 5000 MHz Return Loss >10dB Input Return Loss 11.0 13.0 dB 1950MHz Output Return Loss 14.0 19.0 dB 1950MHz Noise Figure 4.5 5.5 dB 1950MHz Device Operating Voltage 4.7 4.9 5.3 V Device Operating Current 72 80 88 mA Thermal Resistance (junction to lead) 102 °C/W Test Conditions: V S=8V , ID=80mA T yp., OIP3 Tone Spacing=1MHz, P OUT per tone=0dBm, R BIAS=39 , TL=25°C, ZS=ZL=50
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBA5086Z Typical Performance at Key Operating Frequencies Absolute Maximum Ratings Parameter Rating Unit Device Current (ID)1 3 0 m A Device Voltage (VD)6 V RF Input Power +17 dBm Junction Temp (TJ)+ 1 5 0 ° C Operating Temp Range (TL) -40 to +85 °C Storage Temp +150 °C Operating Dissipated Power 0.65 W Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD<(TJ-TL)/R TH, j-l and TL=TLEAD Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss dB 31 20 17.5 13.0 12.9 12.4 Output Return Loss dB 26 26 25 19.0 19 18.7 Reverse Isolation dB 22.5 22.8 23 23 23 23 Noise Figure dB 4.2 4.5 4.2 4.4 - - Test Conditions: VS=8V , ID=80mA T yp., OIP3 Tone Spacing=1MHz, P OUT per tone=0dBm, R BIAS=39 , TL=25°C, ZS=ZL=50 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. NF vs Frequency 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 00 . 511 . 522 . 533 . 5 Frequency (GHz) dB +25c -40c +85c OIP3 vs Frequency 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) IP3 (dB) +25c -40c +85c P1dB vs Frequency 00 . 511 . 522 . 533 . 5 Fr equency (GHz) dBm +25c -40c +85c
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBA5086Z |S11| vs. Frequency -40 -35 -30 -25 -20 -15 -10 0123456 Frequency (GHz) s11(dB) +25c -40c +85c |S21| vs. Frequency 0123456 Frequency (GHz) s21(dB) +25c -40c +85c |S12| vs. Frequency -24 -22 -20 -18 -16 -14 -12 0123456 Frequency (GHz) s12(dB) +25c -40c +85c |S22| vs. Frequency -35 -30 -25 -20 -15 -10 0123456 Frequency (GHz) s22 (dB) +25c -40c +85c 850MHz Adj. Chan. Pwr vs. Channel output Power -70 -65 -60 -55 -50 -45 -40 -35 -30 6 7 8 9 10 11 12 13 14 15 16 17 Channel Pwr (dBm) ACP (dBc) +25c ACP -40c ACP +85c ACP 1950MHz Adj. Chan. Pwr Vs Channel Output Power -70 -65 -60 -55 -50 -45 -40 -35 -30 5 6 7 8 9 1 01 11 21 31 41 51 6 Channel Pwr (dBm) ACP (dBc) +25c -40c +85c
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBA5086Z Basic Application Circuit Evaluation Board Layout Mounting Instructions: 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper . Measurements for this data sheet were made on a 3 1mil thick FR-4 board with 1 ounce copper on both sides. Application Circuit Element Values Recommended Bias Resistor Values for I D=80mA, R BIAS=(VS-VD) /ID Reference Designator 500MHz 850MHz 1950MHz 2400MHz 3500MHz CB 220pF 100pF 68pF 56pF 39pF CD 100pF 68pF 22pF 22pF 15pF LC 68nH 33nH 22nH 18nH 15nH Supply Voltage (VS)7 . 5 V 8 V 1 0 V 1 2 V RBIAS 33 39 68 91 Note: RBIAS provides DC bias stability over temperature. RF in RF out 1 uF CBCB CD VS RBIAS LC 1000 pF SBA5086Z 1 uF RBIAS BA4 1000 pF CBCB CD LC VS
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBA5086Z PCB Pad Layout Pin Function Description 1R F I N RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera- tion. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3R F O U T / B I A S RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper operation. PCB Pad Layout Dimensions in inches [millimeters]
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBA5086Z Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Part Identification The part will be marked with a “B5Z” designator on the top surface of the package.
Ordering Information
SBA5086Z 7” Reel with 1000 pieces SBA5086ZSQ Sample ba g with 25 pieces SBA5086ZSR 7” Sample reel with 100 pieces SBA5086ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag