S9970

S9970 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Low dark signal: 10 e-/pixel/s Typ. (0 ˚C, MPP mode) /K6C Low readout noise: 4 e-rms Typ. /K6C 512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format /K6C Pixel size: 24 × 24 µm /K6C Line/pixel binning /K6C 100 % fill factor /K6C Wide dynamic range /K6C MPP operation

Applications

/K6C Fluorescence spectrometer, ICP /K6C Raman spectrometer /K6C Industrial inspection requiring /K6C Semiconductor inspection /K6C DNA sequencer /K6C Low-light-level detection IMAGE SENSOR CCD area image sensor Low dark signal · low readout noise/front-illuminated FFT-CCD I Selection guide Type No. Cooling Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] Suitable multichannel Detector head S9970-0906 532 × 64 512 × 60 12.288 × 1.440 S9970-1006 1044 × 64 1024 × 60 24.576 × 1.440 S9970-1007 1044 × 128 1024 × 124 24.576 × 2.976 S9970-1008 Non-cooled 1044 × 256 1024 × 252 24.576 × 6.048 C7020 S9971-0906 532 × 64 512 × 60 12.288 × 1.440 S9971-1006 1044 × 64 1024 × 60 24.576 × 1.440 S9971-1007 1044 × 128 1024 × 124 24.576 × 2.976 C7021 S9971-1008 One-stage TE-cooled 1044 × 256 1024 × 252 24.576 × 6.048 C7025 I General ratings Parameter Specification Pixel size 24 (H) × 24 (V) µm Vertical clock phase 2 phase Horizontal clock phase 2 phase Output circuit One-stage MOSFET source follower Package 24 pin ceramic DIP (refer to dimensional outlines) Window *1 S9970 series: quartz glass S9971 series: sapphire glass *1: Temporary window type (ex. S9970-0906N) and UV coa t type (ex. S9970-0906UV) are available upon request. (Temporary window is fixed by tape to protec t the CCD chip and wire bonding.)

CCD area image sensor S9970/S9971 series I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Operating temperature Topr -50 - +30 °C Storage temperature Tstg -50 - +70 °C OD voltage V OD -0.5 - +25 V RD voltage VRD -0.5 - +18 V ISV voltage V ISV -0.5 - +18 V ISH voltage VISH -0.5 - +18 V IGV voltage V IG1V, VIG2V -15 - +15 V IGH voltage VIG1H, VIG2H -15 - +15 V SG voltage V SG -15 - +15 V OG voltage VOG -15 - +15 V RG voltage V RG -15 - +15 V TG voltage VTG -15 - +15 V Vertical clock voltage V P1V, VP2V -15 - +15 V Horizontal clock voltage VP1H, VP2H -15 - +15 V I Operating conditions (MPP mode, Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage V OD 18 20 22 V Reset drain voltage VRD 11.5 12 12.5 V Output gate voltage V OG 135 V Substrate voltage VSS - 0 - V Test point (vertical input source) V ISV -V RD -V Test point (horizontal input source) VISH - VRD - V Test point (vertical input gate) V IG1V, VIG2V -8 0 - V Test point (horizontal input gate) VIG1H, VIG2H -8 0 - V High V P1VH, VP2VH 046Vertical shift register clock voltage Low V P1VL, VP2VL -9 -8 -7 V High VP1HH, VP2HH 0 4 6Horizontal shift register clock voltage Low VP1HL, VP2HL -9 -8 -7 V High V SGH 046Summing gate voltage Low V SGL -9 -8 -7 V High VRGH 0 4 6Reset gate voltage Low VRGL -9 -8 -7 V High V TGH 046Transfer gate voltage Low V TGL -9 -8 -7 V I Electrical characteristics (Ta=25 °C) Parameter Symbol Remark Min. Typ. Max. Unit Signal output frequency fc - - 0.1 1 MHz S9970/S9971-0906 - - 750 - S9970/S9971-1006 - - 1500 S9970/S9971-1007 - - 3000 Vertical shift register capacitance S9970/S9971-1008 CP1V, CP2V - - 6000 pF S9970/S9971-0906 - - 100 - S9970/S9971-1006 - - 180 S9970/S9971-1007 - - 180 Horizontal shift register capacitance S9970/S9971-1008 CP1H, CP2H - - 180 pF Summing gate capacitance CSG - - 7 - pF Reset gate capacitance C RG --7- p F S9970/S9971-0906 - - 60 - S9970/S9971-1006 - - 100 S9970/S9971-1007 - - 100 Transfer gate capacitance S9970/S9971-1008 CTG - - 100 pF Transfer efficiency CTE * 2 0.99995 0.99999 - - DC output level Vout *3 12 15 18 V Output impedance Zo * 3 -3- k Ω Power dissipation P *3, *4 - 15 - mW *2: Charge transfer efficiency per pixel, measured at half of the full well capacity. *3: The values depend on the load resistance. (V OD=20 V, Load resistance=22 k Ω ) *4: Power dissipation of the on-chip amplifier.

CCD area image sensor S9970/S9971 series I Spectral response (without window) 200 400300 500 600 700 WAVELENGTH (nm) 800 900 1000 1100 1200 QUANTUM EFFICIENCY (%) (Typ. Ta=25 ˚C) UV COAT I Spectral transmittance characteristics 100 200 WAVELENGTH (nm) TRANSMITTANCE (%) 300 400 500 600 700 800 900 1000 100 (Typ. Ta=25 ˚C) QUARTZ WINDOW SAPPHIRE WINDOW I Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Remark Min. Typ. Max. Unit Saturation output voltage Vsat - - Fw × Sv - V Vertical 150 300 -Full well capacity Horizontal Fw - 300 600 - ke- CCD node sensitivity Sv * 5 -3 . 5- µ V / e - +25 °C - 200 3000Dark current (MPP mode) 0 °C DS *6 - 10 150 e-/pixel/s Readout noise Nr * 7 -4 1 8 e -rms Line binning 16666 150000 -Dynamic range Area scanning - *8 8333 75000 - - Spectral response range λ - - 400 to 1100 - nm Photo response non-uniformity PRNU *9 - - ±10 % Point defects * 10 --0 Cluster defects * 11 --0Blemish Column defects *12 --0 *5: VOD=20 V , Load resistance=22 kΩ *6: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *7: -40 °C, operating frequency is 80 kHz. *8: DR = Fw / Nr *9: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak) *10: White spots > 3 % of full well at 0 °C after Ts=1 s Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one- half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more contiguous defective pixels KMPDB0244EB KMPDB0101EA

CCD area image sensor S9970/S9971 series I Device structure, line output format V IG1V IG2V ISV SS RG RD OS OD OG SG D1 D10 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 45 6 2023 2224 16 15 V=60, 124, 252 H=512, 1024 ISH IG1H IG2HP1HP2H 11109

4 BLANK4 BLANK

4 OPTICAL

2 ISOLATION 2 ISOLATION

(Shutter must be open) VERTICAL BINNING PERIOD (Shutter must be closed) 3.. 62 3..126 3..254 127 255 64← 128← 256← P1V P2V, TG P1H P2H, SG READOUT PERIOD (Shutter must be closed) 60 + 4 (ISOLATION): S9970/1-0906/-1006 124 + 4 (ISOLATION): S9970/1-1007 252 + 4 (ISOLATION): S9970/1-1008 Tpwv Tovr Tpwh, Tpws Tpwr 123 531 1043 532 1044 : S9970/1-0906 4..530 4..1042 D19D2D1 D20 RG OS S1..S512 : S9970/1-0906 KMPDC0227EA Pixel format Left ← Horizontal Direction → Right Blank Optical Black Isolation Effective Isolation Optical Black Blank 4 4 2 512 or 1024 2 4 4 Top ← Vertical Direction → Bottom Isolation Effective Isolation 2 60, 124 or 252 2 KMPDC0015EB I Timing chart Line binning

CCD area image sensor S9970/S9971 series INTEGRATION PERIOD (Shutter must be open) P1V RG OS P2V, TG P1H P2H, SG READOUT PERIOD (Shutter must be closed) ENLARGED VIEW Tpwv Tovr Tpwr D1 D2 D3 D4 D18 D19 D20 P2V, TG P1H P2H, SG RG OS Tpwh, Tpws 123 4.. 63 4..127 4..255 S1..S512 : S9970/1-0906 64← 60 + 4 (ISOLATION): S9970/1-0906/-1006 128← 124 + 4 (ISOLATION): S9970/1-1007 256← 252 + 4 (ISOLATION): S9970/1-1008 KMPDC0229EA Parameter Symbol Remark Min. Typ. Max. Unit S9970/S9971-0906 1.5 4.5 - S9970/S9971-1006 3.0 9.0 - S9970/S9971-1007 6.0 18 -Pulse width S9970/S9971-1008 Tpwv * 13 12 36 - µsP1V, P2V, TG Rise and fall time Tprv, Tpfv - 200 - - ns Pulse width Tpwh - 500 5000 - ns Rise and fall time Tprh, Tpfh *13 10 - - nsP1H, P2H Duty ratio - - - 50 - % Pulse width Tpws * 14 500 5000 - ns Rise and fall time Tprs, Tpfs - 10 - - nsSG Duty ratio - - - 50 - % Pulse width Tpwr 100 500 - nsRG Rise and fall time Tprr, Tpfr - 5 - - ns TG - P1H Overlap time Tovr - 3 6 - µs *13: The clock pulses should be overlapped at 50 % of clock pulse amplitude. *14: P2H and SG should have the same electrical specifications. Area scanning 2: large full well mode INTEGRATION PERIOD (Shutter must be open) P1V RG OS P2V, TG P1H P2H, SG READOUT PERIOD (Shutter must be closed) ENLARGED VIEW 4.. 63 4..127 4..255 Tpwv Tovr Tpwr D1 D2 D3 D4 D18 D19 D20 S1..S512 : S9970/1-0906 P2V, TG P1H P2H, SG RG OS Tpwh, Tpws 123 64← 60 + 4 (ISOLATION): S9970/1-0906/-1006 128← 124 + 4 (ISOLATION): S9970/1-1007 256← 252 + 4 (ISOLATION): S9970/1-1008 KMPDC0228EA Area scanning 1: low dark current mode

CCD area image sensor S9970/S9971 series I Dimensional outlines (unit: mm) S9970-0906 a 31.75 ± 0.3 10.05 ± 0.25 0.46 3.0 2.54 27.94 b 1.1 ± 0.3 PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 1st PIN INDICATION PAD a 40.64 ± 0.41 14.99 ± 0.25 b 1.1 ± 0.3 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 0.46 3.0 2.54 27.94 PHOTOSENSITIVE SURFACE Active areaType No. a b S9970-0906 12.288 (H) 1.440 (V) S9970-1006 24.576 (H) 1.440 (V) S9970-1007 24.576 (H) 2.976 (V) S9970-1008 24.576 (H) 6.048 (V) KMPDA0195EA a 40.64 ± 0.41 10.05 ± 0.25 b 1.1 ± 0.3 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE 0.46 3.0 2.54 27.94 PHOTOSENSITIVE SURFACE KMPDA0194EA KMPDA0193EA S9970-1008 S9970-1006/-1007

CCD area image sensor S9970/S9971 series a 40.64 ± 0.41 14.99 ± 0.25 b 3.2 ± 0.4 c 12.0 4.0 5.0 0.46 2.54 27.94 7.65 ± 0.5 58.84 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE TE-COOLER a 32.0 ± 0.3 14.99 ± 0.25 0.46 2.54 27.94 b 3.2 ± 0.4 c 12.0 7.65 ± 0.5 50.0 4.0 5.0 1st PIN INDICATION PAD PHOTOSENSITIVE SURFACE TE-COOLER 7.3 1.0 6.7 5.3 PHOTOSENSITIVE SURFACE (24×) 0.5 7.7 1st PIN INDICATION PAD 6.048 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 WINDOW 28.6 ACTIVE AREA 24.576 8.2 TE-COOLER Active areaType No. a b c S9971-0906 12.288 (H) 1.440 (V) 7.5 S9971-1006 24.576 (H) 1.440 (V) 7.5 S9971-1007 24.576 (H) 2.976 (V) 7.1 KMPDA0196EA KMPDA0197EA KMPDA0198EA S9971-1006/-1007 S9971-1008 S9971-0906

CCD area image sensor S9970/S9971 series I Pin connections S9970 series S9971 seriesPin No. Symbol Description Symbol Description Remark

1 RG Reset gate RG Reset gate

2 RD Reset drain RD Reset drain

3 OS Output transistor source OS Output transistor source

4 OD Output transistor drain OD Output transistor drain

5 OG Output gate OG Output gate

6 SG Summing gate SG Summing gate Same timing as P2H

7 NC Th1 Thermistor

8 NC Th2 Thermistor

9 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2

10 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1

11 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) Shorted to GND

12 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) Shorted to GND

13 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Shorted to RD

14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2

15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1

16 TG *15 Transfer gate TG *15 Transfer gate Same timing as P2V

17 NC NC

18 NC P- TE-cooler-

19 NC P+ TE-cooler+

20 SS Substrate (GND) SS Substrate (GND)

21 NC NC

22 ISV Test point (vertical input source) ISV Test point (vertical input source) Shorted to RD

23 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) Shorted to GND

24 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) Shorted to GND

*15: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should be applied to TG. I Specifications of built-in TE-cooler (Typ.) Parameter Symbol Condition S9971-0906 S9971-1006/-1007 S9971-1008 Unit Internal resistance Rint Ta=25 °C 2.8 6.0 1.2 Ω Maximum current *16 Imax Tc *17=Th *18=25 °C 1.5 1.5 3.0 A Maximum voltage Vmax Tc * 17=Th *18=25 °C 4.4 8.8 3.6 V Maximum heat absorption *19 Qmax 3.4 6.7 5.1 W Maximum temperature of hot side -7 0 ° C *16: Maximum current Imax: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *17: Temperature of cool side of thermoelectric cooler *18: Temperature of hot side of thermoelectric cooler *19: Maximum heat absorption Qmax This is a heat absorption when the maximum current is supplied to the TE-cooler.

CCD area image sensor S9970/S9971 series VOLTAGE (V) CCD TEMPERATURE ( ˚C) -40 -30 432 CURRENT (A) -20 -10 (Typ. Ta=25 ˚C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT -30 2.01.51.00.50 -20 -10 (Typ. Ta=25 ˚C) VOLTAGE (V) CCD TEMPERATURE ( ˚C) CURRENT (A) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT -30 2.01.51.00.50 -20 -10 (Typ. Ta=25 ˚C) VOLTAGE (V) CCD TEMPERATURE ( ˚C) CURRENT (A) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT KMPDB0176EB KMPDB0177EB KMPDB0179EB S9971-0906 S9971-1006/-1007 S9971-1008 I TE-cooler characteristics

CCD area image sensor S9970/S9971 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. Cat. No. KMPD1089E06 Feb. 2007 DN I Precaution for use (Electrostatic countermeasures) G Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. G Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. G Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. G Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. I Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. I Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 × expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (298K) = 10 k Ω B (298K / 323K) = 3450 K KMPDB0111EB 10 kΩ 220 240 260 TEMPERATURE (K) RESISTANCE 280 300 100 kΩ 1 MΩ /K6C C7020: for S9970 series C7021: for S9971-0906/-1006/-1007 C7025: for S9971-1008 /K6C Area scanning or full line-binnng operation /K6C Readout frequency: 250 kHz /K6C Readout noise: 20 e-rms /K6C ∆T=50 ˚C (∆T changes by radiation method.) Input Symbol Value Supply voltage VD1 VA1+ VA1- VA2 VD2 Vp VF +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7021, C7025) +5 Vdc, 2.5 A (C7021, C7025) +12 Vdc, 100 mA (C7021, C7025) Master start φms HCMOS logic compatible Master clock φmc HCMOS logic compatible, 1 MHz Multichannel detector head (C7020, C7021, C7025)