S1226

S1226-5BK HAMAMATSU | Alldatasheet

Document overview

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Technical content

Features

/K6C High UV sensitivity: QE 75 % (λ=200 nm) /K6C Suppressed IR sensitivity /K6C Low dark current /K6C High reliability

Applications

/K6C Analytical equipment /K6C Optical measurement equipment, etc. PHOTODIODE Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity S1226 series I General ratings / absolute maximum ratings Absolute maximum ratings Package Active area size Effective active area Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * (mm) (mm) (mm 2) (V) (°C) (°C) S1226-18BQ ➀ /Q -20 to +60 -55 to +80 S1226-18BK ➀ /K TO-18 1.1 × 1.1 1.2 -40 to +100 -55 to +125 S1226-5BQ ➁ /Q -20 to +60 -55 to +80 S1226-5BK ➁ /K 2.4 × 2.4 5.7 -40 to +100 -55 to +125 S1226-44BQ ➁ /Q -20 to +60 -55 to +80 S1226-44BK ➁ /K TO-5 3.6 × 3.6 13 -40 to +100 -55 to +125 S1226-8BQ ➂ /Q -20 to +60 -55 to +80 S1226-8BK ➂ /K TO-8 5.8 × 5.8 33 -40 to +100 -55 to +125 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Short circuit current Isc 100 lx Spectral response range λ Peak sensi- tivity wave- length λp λp 200 nm He-Ne laser Min. Typ. Dark current ID VR=10 mV Max. Temp. coeffi- cient of ID TCID Rise time tr VR=0 V RL=1 kΩ Terminal capaci- tance Ct VR=0 V f=10 kHz Shunt resistance Rsh VR=10 mV NEP Type No. (nm) (nm) Min. Typ. 633 nm(µA) (µA) (pA) (times/°C) (µs) (pF) Min. (GΩ) Typ. (GΩ) (W/Hz1/2) S1226-18BQ 190 to 1000 0.10 0.12 S1226-18BK 320 to 1000 -- 0.5 0.66 2 0.15 35 5 50 1.6 × 10 -15 S1226-5BQ 190 to 1000 0.10 0.12 S1226-5BK 320 to 1000 -- 2.2 2.9 5 0.5 160 2 20 2.5 × 10 -15 S1226-44BQ 190 to 1000 0.10 0.12 S1226-44BK 320 to 1000 -- 4.4 5.9 10 1 380 1 10 3.6 × 10 -15 S1226-8BQ 190 to 1000 0.10 0.12 S1226-8BK 320 to 1000 720 0.36 0.34 12 16 20 1.12 2 950 0.5 5 5.0 × 10 -15 * Window material, K: borosilicate glass, Q: quartz glass

Si photodiode S1226 series RISE TIME LOAD RESISTANCE (Ω) (Typ. Ta=25 ˚C, VR=0 V) 10210 ns 103 104 105 S1226-18BQ/BK S1226-5BQ/BK S1226-8BQ/BK S1226-44BQ/BK 100 ns 1 µs 10 µs 100 µs 1 ms I Spectral response I Photo sensitivity temperature characteristic KSPDB0106EA KSPDB0030EA I Rise time vs. load resistance I Dark current vs. reverse voltage KSPDB0107EA KSPDB0108EA 0.1 PHOTO SENSITIVITY (A/W) 190 400 600 800 1000 WAVELENGTH (nm) 0.3 0.2 (Typ. Ta =25 ˚C) 0.4 0.5 0.6 0.7 S1226-BQ S1226-BK TEMPERATURE COEFFICIENT (%/˚C) WAVELENGTH (nm) (Typ. ) 190 400 600 800 1000 +1.0 +0.5 +1.5 -0.5 DARK CURRENT REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C) 0.01 100 fA 0.1 1 10 1 pA 10 pA 100 pA 1 nA 10 nA S1226-8BQ/BK S1226-5BQ/BK, -18BQ/BK S1226-44BQ/BK

Si photodiode S1226 series I Shunt resistance vs. ambient temperature KSPDB0109EA SHUNT RESISTANCE AMBIENT TEMPERATURE (˚C) (Typ. VR=10 mV) - 2 00 2 04 06 08 010 kΩ 100 kΩ 1 MΩ 10 MΩ 100 MΩ 1 GΩ 10 GΩ 100 GΩ 1 TΩ S1226-18BQ/BK, -5BQ/BK S1226-44BQ/BK S1226-8BQ/BK

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvä gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. Si photodiode S1226 series Cat. No. KSPD1034E03 Oct. 2002 DN The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. 15 5.0 ± 0.2 1.9 0.45 LEAD 12.35 ± 0.1 13.9 ± 0.2 7.5 ± 0.2 WINDOW 10.5 ± 0.1 PHOTOSENSITIVE SURFACE MARK ( 1.4) CONNECTED TO CASE KSPDA0115EA PHOTOSENSITIVE SURFACE 2.4 3.6 ± 0.2 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE WINDOW 3.0 ± 0.2 0.45 LEAD 20 4.1 ± 0.2 2.9 0.45 LEAD 8.1 ± 0.1WINDOW 5.9 ± 0.1 PHOTOSENSITIVE SURFACE 9.1 ± 0.2 5.08 ± 0.2 CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. ➂ S1226-8BQ/-8BK KSPDA0113EB KSPDA0114EA I Dimensional outlines (unit: mm) ➀ S1226-18BQ/-18BK ➁ S1226-5BQ/K, S1226-44BQ/K