S9648-200SB

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Plastic package shaped the same as metal package www.hamamatsu.com Photo IC diode The S9648-200SB photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can be measured by fi nding the difference between the two output signals in the in- ternal current amplifi er circuit. Compared to the previous type, the S9648-200SB offers lower output fl uctuations for light sources producing the same illuminance at different color temperatures. The S9648-200SB is encapsulated in a plastic package having the same shape as a metal package. The shape of the S9648-100 also resembles our 5R type visible sensors (CdS photoconduc- tive cells), so the S9648-200SB can be used as a replacement for those visible sensors. Absolute maximum ratings (Ta=25 °C) Parameter Symbol Condition Value Unit Maximum reverse voltage VR max -0.5 to 12 V Photocurrent IL 5m A Forward current IF 5m A Power dissipation*1 P 250 mW Operating temperature Topr No dew condensation *2 -30 to +80 °C Storage temperature Tstg No dew condensation* 2 -40 to +85 °C *1: Power dissipation decreases at a rate of 3.3 mW/°C above Ta=25 °C. *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, unless otherwise noted.) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 300 to 820 - nm Peak sensitivity wavelength λp - 560 - nm Dark current ID VR=5 V - 1.0 50 nA Photocurrent IL VR=5 V, 2856 K, 100 lx 0.18 - 0.34 mA Rise time*3 tr 10 to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm - 6.0 - ms Fall time*3 tf 90 to 10%, VR=7.5 V RL=10 kΩ, λ=560 nm - 2.5 - ms *3: Rise/fall time measurement method (page 2) Energy-saving sensor for TVs, etc. Light dimmers for liquid crystal panels Various types of light level measurement Spectral response close to human eye sensitivity is attained without using visual-compensated fi lter. Operation just as easy to use as a photodiode Lower output-current fl uctuations compared with phototransistors and CdS photoconductive cells. Low output fl uctuations for light sources producing the same illuminance at different color temperatures Excellent linearity Features Applications

Photo IC diode S9648-200SB Spectral response Photocurrent vs. illuminance 0.1 0.2 0.3 0.4 0.5 0.7 0.9 0.6 0.8 1.0 200 400 600 800 Wavelength (nm) 1000 1200 Relative sensitivity (Typ. Ta=25 °C, VR=5 V) S9648-200SB Human eye sensitivity Illuminance (lx) (Typ. Ta=25 °C, VR=5 V, 2856 K) Photocurrent 0.1 1 10 100 nA 1 μA 10 μA 10 mA 1 mA 100 μA 1000100 10000 KPICB0085EC KPICC0229EB KPICB0083EC Pulsed light from LED (λ=560 nm) Vout Load resistance R L 7.5 V 90% 2.5 V 10% Vout tr tf0.1 μF

Photo IC diode S9648-200SB Operating circuit example KPICC0091EC The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance C L in parallel with load resistance R L as a low-pass fi lter. Cutoff frequency (fc) 2πCLRL Photodiode for signal offset Cathode Anode CL RL Vout Reverse bias power supply The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Current amp (Approx. 30000 times) Photodiode for signal detection Internal protection resistance (Approx. 150 Ω) Rise/fall times vs. load resistance Directivity 0.1 100 0.01 100 10 k 1 k 100 k Load resistance (Ω) 1 M Rise/fall times (ms) (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) Rise time Fall time 90° 80° 70° 60° 50° 40° 30° 90° 80° 70° 60° 50° 40° 020 40 60 80 10020 40 60 80 100 Relative sensitivity (%) (Typ. Ta=25 °C, tungsten lamp) KPICB0077EB KPICB0174EA

Photo IC diode S9648-200SB KPICB0107EC [Figure 2] Photocurrent vs. reverse voltage 300 lx 600 lx 880 lx 1150 lx 1380 lx 1600 lx Reverse voltage (V) 012345 (Typ. Ta=25 °C) Photocurrent (mA) Saturation region approx. 650 lx Rising voltage Vbe(ON)≈0.7 V Load line Vcc=3 V, RL=1 kΩ Load line Vcc=5 V, RL=1 kΩ Saturation region approx. 1260 lx Internal protective resistance Rin: approx. 150 Ω RL (external resistor) IL Photo IC diode Rin=150 Ω ± 20% (internal protection resistor) Vcc KPICC0128EC [Figure 1] Measurement circuit example Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage V R when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the m aximum detectable light level can be specifi ed. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximatel y 0.1%/°C.

Cat. No. KPIC1089E05 Aug. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of August, 2015. Photo IC diode S9648-200SB KPICA0057ED Dimensional outline (unit: mm) Anode Cathode Lead surface finish: Sn plating Packing: Polyethylene pack [anti-static type] (500 pcs/pack) Fillet Tie-bar cut point (including burr, no plating) 0.75 ± 0.25 1.5 max. (4.3) (1.0)1.0 min. 2.54 ± 0.5 (specified at lead root) (2 ×) /box30.5 Sn plated lead ϕ5.0 ± 0.2 Center of photosensitive area Photosensitive area 0.46 × 0.32 0.13 Photosensitive surface Related information ∙ Disclaimer Precautions www.hamamatsu.com/sp/ssd/doc_en.html