S9345 HAMAMATSU | Alldatasheet
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Dual-element photodiode using newly developed small, thin package S9345 S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume reduced to one- fifth that of similar type photodiodes using conventional package. In order to extend the detection area when used as a reflection-mode optical switch, the entire photodiode active area of 1.5 mm wide and 5.6 mm long is asymmetrically segmented into 2 longitudinal sections of 1.5 mm and 4.1 mm. Features Applications /K6C Miniature and thin plastic package: 3.4 × 7.0 × 0.95 t mm /K6C Surface mounting type /K6C Asymmetrical dual-element PIN photodiode /K6C Active area Photodiode a: 1.5 × 1.5 mm Photodiode b: 1.5 × 4.1 mm /K6C High sensitivity /K6C Optical switch I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Maximum reverse voltage V R Max.20 V Operating temperature Topr -25 to +85 °C Storage temperature Tstg -40 to +100 °C I Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm Photo sensitivity S λ=780 nm 0.5 0.55 - A/W Photodiode a - 2.6 -Short circuit current Photodiode b Isc VR=0 V, 2856 K, 100 lx - 7.1 - µA Dark current I D VR=10 V, all elements - 0.4 5 nA Photodiode a - 4 8Terminal capacitance Photodiode b Ct VR=10 V, f=1 MHz - 10 20 pF Cut-off frequency fc VR=10 V, RL=50 Ω λ=780 nm, -3 dB 71 5- M H z
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Cat. No. KPIN1069E01 Dec. 2004 DN Si PIN photodiode S9345 1.3 7.2 ± 0.2 7.0 * 6.4 2.54 3.4 *0.3 0.3 4.0 ± 0.2 4.0 ± 0.2 3.4 * 2.8 7.0 * 7.2 ± 0.2 0.05 0.45 0.75 0.950.15 0.05 2.54 0.5 0.2 a b a b ACTIVE AREA PHOTOSENSITIVE SURFACE 1.5 ACTIVE AREA 1.5 0.02 4.1 Tolerance unless otherwise noted: ±0.1, ±2˚ Chip position accuracy with respect to the package dimensions marked *. Electrodes Part of the lead frame on the bottom of the package might not be covered with epoxy resin. ANODE a CATHODE COMMON ANODE b CATHODE COMMON CATHODE COMMON REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C) DARK CURRENT 0.01 0.1 1 10 1 pA 10 pA 100 pA 1 nA 100 nA 10 nA 100 KPINB0293EA I Dimensional outline (unit: mm) I Spectral response KPINA0095EA KPINB0294EA I Photo sensitivity temperature characteristic WAVELENGTH (nm) (Typ.) TEMPERATURE COEFFICIENT (%/ ˚C) 400 500 600 700 800 900 1000 -0.2 0.2 1.4 0.8 1.0 1.2 0.6 0.4 1100 KPINB0295EA I Dark current vs. reverse voltage KPINB0296EAREVERSE VOLTAGE (V) (Typ. Ta=25 ˚C, f=1 MHz) TERMINAL CAPACITANCE 0.1 1 10 100 fF 1 pF 10 pF 100 pF 1 nF 100 PHOTODIODE b PHOTODIODE a I Terminal capacitance vs. reverse voltage WAVELENGTH (nm) (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 400200 0.1 0.2 0.8 0.5 0.6 0.7 0.4 0.3 600 800 1000 1200 QE=100 %