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Technical content

Features

Low-light-level measurement, etc.

Applications

The S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor (10 G Ω) are integrated into a single package. A thermistor is also included in the same package for temperature control so that the photodiode and I-V conversion circuit can be cooled for stable operation. The S9295 series also features low noise and low NEP, and is especially suitable for NOx detection. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. The S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions in P.6. Absolute maximum ratings Parameter Symbol Value Supply voltage (preamp) Vcc ±20 V Operating temperature Topr -30 to +60 °C Storage temperature Tstg -40 to +80 °C TE-cooler allowable voltage*1 Vte 5 V*2 TE-cooler allowable current Ite 1 A Thermistor power dissipation Pth 0.2 mW *1: Ripple max.: 10% Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Recommended operating conditions Parameter Symbol Value Supply voltage (preamp) Vcc ±5 to ±15 V TE-cooler current Ite 0.8 A max. Thermistor power dissipation Pth 0.03 mW max. Load resistance RL 100 kΩ min.

Si photodiodes with preamp S9295 series Spectral response Frequency response Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ) Parameter Symbol Condition S9295 S9295-01 UnitTd=-25 °C Td=-5 °C Spectral response range λ 190 to 1100 nm Peak sensitivity wavelength λp9 60 nm Feedback resistance (built-in)*3 Rf 10 GΩ Photosensitivity S λ=200 nm 0.9 V/nWλ=λp5 .1 Output noise voltage Vn Dark state, f=10 Hz 20 25 μV rms/Hz1/2 Noise equivalent power NEP λ=λp, f=10 Hz 4 5 fW/Hz1/2 Output offset voltage Vos Dark state ±2 mV Cutoff frequency fc -3 dB 190 180 Hz Output voltage swing Vo 13 V Supply current Icc Dark state 0.3 mA Thermistor resistance Rth 86 30 kΩ *3: Custom devices are available with different Rf values and/or internal Cf, etc. 200 Wavelength (nm) Photosensitivity (V/nW) 400 600 800 1000 (Typ. Vcc=±15 V) S9295 (Td=-25 °C) KSPDB0228EA -30 Frequency (Hz) Relative output (dB) 100 100001000 (Typ. Vcc=±15 V) -20 -10 S9295 (Td=-25 °C) S9295-01 (Td=-5 °C) KSPDB0229EA

Si photodiodes with preamp S9295 series 100 Frequency (Hz) NEP (fW/Hz1/2) 10 100 100001000 (Typ. Vcc=±15 V) 101 103 102 S9295-01 (Td=-5 °C) S9295 (Td=-25 °C) KSPDB0230EB 10-7 10-6 Frequency (Hz) Output noise voltage (V rms/Hz1/2) 10 100 100001000 (Typ. Vcc=±15 V) 10-5 10-3 10-4 S9295-01 (Td=-5 °C) S9295 (Td=-25 °C) KSPDB0231EA -30 TE-cooler current Ite (A) Element temperature Td (°C) TE-cooler voltage Vte (V) (Typ. Ta=25 °C) -10 -20 Td vs. Ite Vte vs. Ite KSPDB0151EB -30 TE-cooler current Ite (A) Element temperature Td (°C) TE-cooler voltage Vte (V) (Typ. Ta=25 °C) -10 -20 Td vs. Ite Vte vs. Ite KSPDB0172EB NEP vs. frequency Element temperature vs. TE-cooler current Output noise voltage vs. frequency S9295 S9295-01

Si photodiodes with preamp S9295 series TE-cooler S9295: Two-stage S9295-01: One-stage Vcc TE-cooler Case GND Vcc- Out NC Package Rf=10 GΩ -+ + Photodiode Thermistor KSPDC0047EA External connection -30 Temperature (°C) Thermistor resistance (kΩ) -10 0-20 10 30 20 (Typ.) 120 100 KSPDB0152EA Thermistor resistance vs. temperature

Si photodiodes with preamp S9295 series 42.0 ± 0.4 34.0 ± 0.2 Window ϕ16.0 ± 0.2 7.0 ± 0.319 ± 1 0.9 ± 0.2 Photosensitive area Sapphire window (t=0.5) Photosensitive surface 17.8 ± 0.3 7.6 ± 0.3 (4.7) Index mark ϕ24.3 ± 0.2 (2 ×)ϕ4 ϕ27.4 ± 0.3 ϕ1.0 Lead KSPDA0071EC 42.0 ± 0.4 34.0 ± 0.2 Window ϕ16.0 ± 0.2 13.5 ± 0.319 ± 1 0.9 ± 0.2 Photosensitive area Sapphire window (t=0.5) Photosensitive surface 17.8 ± 0.3 7.6 ± 0.3 6.0 Index mark ϕ24.3 ± 0.2 ϕ27.4 ± 0.3 ϕ1.0 Lead (2 ×)ϕ4 KSPDA0079EB A tantalum or ceramic capacitor of 0.1 to 10 μF must be connected to the supply voltage leads (pins ’ and ˜) as a bypass capacitor used to prevent the device from oscillation. Dimensional outlines (unit: mm) S9295 S9295-01

Si photodiodes with preamp S9295 series Precautions ESD The S9295 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltage from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasur e against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. Th e following precautions must be observed during use: ∙ To protect the device from electro static discharge which accumulate on the operator or the operator,s clothes, use a wrist strap or similar tools to ground the operator,s body via a high impedance resistor (1 M Ω). ∙ A semiconductive sheet (1 MΩ to 10 MΩ) should be laid on both the work table and the fl oor in the work area. ∙ When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 M Ω. ∙ For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ/cm 2 to 1 GΩ/cm2. Strength ∙ Thermoelectrically-cooler devices may be damaged if subjected to shock, for example drop impact. Take suf fi cient care when handling these devices. Lead forming ∙ When forming the leads, take care not to apply excessive force to the lead sealing glass. Excessive force may impair the hermet ic sealing, possibly degrading the cooling capacity. To form the leads, hold the roots of the leads securely with a pair of pliers and bend them. Heatsink ∙ Use a heatsink with thermal resistance less than 1.3 °C/W. Apply thermal grease between the heatsink and detector package, and then fasten them with the screws. Be careful not to give any excessive force or mechanical stress to the detector package at th is point. Wiring ∙ Be careful not to misconnect the plus and minus leads of the thermoelectric cooler or preampli fi er. Supplying a voltage or current while these connections are reversed may damage the device. ∙ The feedback resistor integrated into S9295 series is high so it is susceptible to external noise. Always ground the case termi nal when using S9295. Against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product ’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s componen t materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like.

www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of October, 2015. Cat. No. KSPD1064E03 Oct. 2015 DN Si photodiodes with preamp S9295 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples