S9295 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Large active area: 10 × 10 mm /K6C UV to NIR Si photodiode optimized for precision photometry /K6C Compact hermetic package with sapphire window /K6C High precision FET input operational amplifier /K6C High gain: Rf=10 GΩ /K6C Low noise and NEP /K6C High cooling efficiency S9295 : ∆T=50 ˚C S9295-01: ∆T=30 ˚C /K6C High stability with thermistor /K6C Highly resistant to EMC noise

Applications

/K6C NOx detection /K6C Low-light-level measurement, etc. PHOTODIODE Si photodiode with preamp Large area photodiode integrated with op amp and TE-cooler S9295 series S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page. I Absolute maximum ratings I Recommended operating conditions Parameter Symbol Value Parameter Symbol Value Supply voltage (preamp) Vcc ±20 V Supply voltage (preamp) Vcc ±5 to ±15 V Operating temperature Topr -30 to +60 °C TE-cooler current Ite 0.8 A Max. Storage temperature Tstg -40 to +80 °C Thermistor power dissipation Pth 0.03 mW Max. TE-cooler allowable voltage *1 Vte 5 V *2 Load resistance RL 100 kΩ Min. TE-cooler allowable current Ite 1 A Thermistor power dissipation Pth 0.2 mW *1: Ripple Max.: 10 % I Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ ) S9295 S9295-01Parameter Symbol Condition T= -25 °C T= -5 °C Unit Spectral response range λ 190 to 1100 nm Peak sensitivity wavelength λp 960 nm Feedback resistance (built-in) *3 Rf 10 GΩ λ=200 nm 0.9 0.9Photo sensitivity S λ=λp 5.1 5.1 V/nW Output noise voltage Vn Dark state, f=10 Hz 20 25 µVrms/Hz 1/2 Noise equivalent power NEP λ=λp, f=10 Hz 4 5 fW/Hz1/2 Output offset voltage Vos Dark state ±2 ±2 mV Cut-off frequency fc -3 dB 190 180 Hz Output voltage swing Vo 13 V Supply current Icc Dark state 0.3 mA Thermistor resistance Rth 86 30 kΩ *3: Custom devices are available with different Rf values and/or internal Cf, etc.

Si photodiode with preamp S9295 series 200 WAVELENGTH (nm) PHOTO SENSITIVITY (V/nW) 400 600 800 1000 (Typ. Vcc=±15 V) S9295 (T= -25 ˚C) I Spectral response KSPDB0228EA -30 FREQUENCY (Hz) RELATIVE OUTPUT (dB) 100 10000 1000 (Typ. Vcc=±15 V) -20 -10 S9295 (T= -25 ˚C) S9295-01 (T= -5 ˚C) I Frequency response KSPDB0229EA 100 FREQUENCY (Hz) NEP (fW/Hz1/2) 10 100 10000 1000 (Typ. Vcc=±15 V) 101 103 102 S9295-01 (T= -5 ˚C) S9295 (T= -25 ˚C) I NEP vs. frequency KSPDB0230EB 10-7 10-6 FREQUENCY (Hz) OUTPUT NOISE VOLTAGE (Vrms/Hz 1/2) 10 100 10000 1000 (Typ. Vcc=±15 V) 10-5 10-3 10-4 S9295-01 (T= -5 ˚C) S9295 (T= -25 ˚C) I Output noise voltage vs. frequency KSPDB0231EA -30 TE-COOLER CURRENT Ite (A) ELEMENT TEMPERATURE T ( ˚C) TE-COOLER VOLTAGE Vte (V) (Typ. Ta=25 ˚C ) -10 -20 T vs. Ite Vte vs. Ite I Element temperature vs. TE-cooler current KSPDB0151EB S9295 S9295-01 -30 TE-COOLER CURRENT Ite (A) ELEMENT TEMPERATURE T ( ˚C) TE-COOLER VOLTAGE Vte (V) (Typ. Ta=25 ˚C ) -10 -20 T vs. Ite Vte vs. Ite KSPDB0172EB

Si photodiode with preamp S9295 series 42.0 ± 0.4 34.0 ± 0.2 WINDOW 16.0 ± 0.2 (2 ×) 4 7.0 ± 0.319 ± 1 0.9 ± 0.2 ACTIVE AREA SAPPHIRE WINDOW (t=0.5) PHOTOSENSITIVE SURFACE 17.8 ± 0.3 7.6 ± 0.3 (4.7) INDEX MARK 24.3 ± 0.2 27.4 ± 0.3 TE-COOLER S9295: TWO-STAGE S9295-01: ONE-STAGE Vcc TE-COOLER CASE GND Vcc- OUT NC PACKAGE Rf=10 GΩ -+ + PHOTODIODE THERMISTOR I External connection KSPDC0047EA I Dimensional outlines (unit: mm) KSPDA0071EB S9295 42.0 ± 0.4 34.0 ± 0.2 WINDOW 16.0 ± 0.2 (2 ×) 4 13.5 ± 0.319 ± 1 0.9 ± 0.2 ACTIVE AREA SAPPHIRE WINDOW (t=0.5) PHOTOSENSITIVE SURFACE 17.8 ± 0.3 7.6 ± 0.3 6.0 INDEX MARK 24.3 ± 0.2 27.4 ± 0.3 S9295-01 KSPDA0079EA -30 TEMPERATURE ( ˚C) THERMISTOR RESISTANCE (k Ω ) -10 0-20 10 30 20 (Typ.) 120 100 I Thermistor resistance vs. temperature KSPDB0152EA A tantalum or ceramic capacitor of 0.1 to 10 µF must be connected to the supply voltage leads (pins ➃ and ➉ ) as a bypass capacitor used to prevent the device from oscillation.

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Si photodiode with preamp S9295 series Cat. No. KSPD1064E01 Dec. 2004 DN Precautions for use I ESD S9295 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltage from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use:

  • T o protect the device from electro static discharge which accumulate on the operator or the operator,s clothes, use a wrist strap or similar tools to ground the operator,s body via a high impedance resistor (1 MΩ ). A semiconductive sheet (1 MΩ to 10 MΩ ) should be laid on both the work table and the floor in the work area. When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ . For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ /cm 2 to 1 GΩ /cm2. I Strength Thermoelectrically-cooler devices may be damaged if subjected to shock, for example drop impact. T ake sufficient care when handling these devices. I Lead forming When forming the leads, take care not to apply excessive force to the lead sealing glass. Excessive force may impair the hermetic sealing, possibly degrading the cooling capacity. T o form the leads, hold the roots of the leads securely with a pair of pliers and bend them. I Heatsink Use a heatsink with thermal resistance less than 1.3 °C/W. Apply thermal grease between the heatsink and detector package, and then fasten them with the screws. Be careful not to give any excessive force or mechanical stress to the detector package at this point. I Wiring  Be careful not to misconnect the plus and minus leads of the thermoelectric cooler or preamplifier. Supplying a voltage or current while these connections are reversed may damage the device.  The feedback resistor integrated into S9295 series is high so it is susceptible to external noise. Always ground the case terminal when using S9295.