S9195

S9195 HAMAMATSU | Alldatasheet

Document overview

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Technical content

Features

/K6C High sensitivity: 0.28 A/W Typ. (λ=405 nm) /K6C High-speed response: 50 MHz Typ. (VR =10 V) /K6C Active area: 5.0 × 5.0 mm /K6C TO-8 metal package

Applications

/K6C Violet-laser detection and monitor PHOTODIODE Si PIN photodiode Si PIN photodiode for violet-laser detection S9195 S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large active area. I Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage V R Max. 20 V Operating temperature Topr -40 to +100 °C Storage temperature Tstg -55 to +125 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1000 - nm Peak sensitivity wavelength λp - 840 - nm Photo sensitivity S λ=405 nm 0.25 0.28 - A/W Dark current ID VR=10 V - 0.5 5 nA Terminal capacitance Ct V R=10 V, f=1 MHz - 60 80 pF Cut-off frequency fc VR=10 V, RL=50 Ω λ=405 nm, -3 dB 30 50 - MHz Noise equivalent power NEP V R=10 V, λ=λp 2.5 × 10 -14 -W / H z 1/2

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Cat. No. KPIN1068E01 Jan. 2004 DN 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200 400 600 800 WAVELENGTH (nm) 1000 PHOTO SENSITIVITY (A/W) (Typ. Ta=25 ˚C) QE=100 % 10 pA 100 pA 1 nA 10 nA 1 pA 0.01 0.1 1 10 REVERSE VOLTAGE (V) 100 DARK CURRENT (Typ. Ta=25 ˚C) 10 pF 100 pF 1 nF 1 pF 0.1 1 10 REVERSE VOLTAGE (V) 100 TERMINAL CAPACITANCE (Typ. Ta=25 ˚C) WAVELENGTH (nm) TEMPERATURE COEFFICIENT (%/ ˚C) -0.5 200 400 600 (Typ.) 800 1000 +0.5 +1.0 +1.5 COMMON TO CASE 1.9 (15) 5.0 ± 0.2 ANODE TERMINAL MARK 1.4 PHOTOSENSITIVE SURFACE 13.9 ± 0.2 12.35 ± 0.1 10.5 ± 0.1 0.45 LEAD 7.5 ± 0.2 The borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. I Dimensional outline (unit: mm) I Spectral response I Dark current vs. reverse voltage KPINB0289EA KPINB0291EA KPINA0094EA I T erminal capacitance vs. reverse voltage KPINB0292EA KPINB0290EA I Photo sensitivity temperature characteristic