S9066-111 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Spectral response close to human eye sensitivity is attained without using visual-compensated filter. /K6C Operation just as easy to use as a photodiode /K6C Large output current equivalent to phototransistors /K6C Lower output-current fluctuations /K6C Excellent linearity /K6C Low output fluctuations for light sources producing the same illuminance at different color temperatures

Applications

/K6C Energy-saving sensor for TVs, etc. /K6C Light dimmers for liquid crystal panels /K6C Cellular phone backlight dimmers /K6C Various types of light level measurement I Absolute maximum ratings (Ta=25 °C) Parameter Symbol S9066-111 S9067-101 Unit Reverse voltage V R -0.5 to 12 V Photocurrent IL 5 mA Forward current I F 5 mA Power dissipation *1 P 250 150 mW Operating temperature Topr -30 to +80 °C Storage temperature Tstg -40 to +85 °C *1: Derate power dissipation at a rate of the following rate above Ta=25 °C. I Electrical and optical characteristics (Ta=25 °C) Spectral response range λ 300 to 820 300 to 820 nm Peak sensitivity wavelength λp - 560 - - 560 - nm Dark current I D V R=5 V - 1.0 50 - 1.0 50 nA Rise time *2 tr - 6.0 - - 6.0 - ms Fall time *2 tf 10 to 90 %, VR=7.5 V RL=10 kΩ , λ=560 nm - 2.5 - - 2.5 - ms *2: Rise/fall time measurement method PULSED LIGHT FROM LED (/K6C =560 nm) V O LOAD RESISTANCE R L 7.5 V 90 % 2.5 V 10 % VO tr tf0.1 µF KPICC0041EA

Photo IC diode S9066-111, S9067-101 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K. Cat. No. KPIC1052E05 Feb. 2008 DN ILLUMINANCE (lx) (Typ. Ta=25 ˚C, VR =5 V, 2856 K) PHOTO CURRENT 0.1 1 10 10 nA 100 nA 1 µA 10 mA 1 mA 100 µA 10 µA 100 1000 AMBIENT TEMPERATURE ( ˚C) DARK CURRENT 1 nA 100 nA 10 µA 10 nA 1 µA 100 pA 05 0 25 75 100 (Typ. VR =5 V) 1000 100 0.1 100 1 k 10 k LOAD RESISTANCE ( Ω ) 100 k 1 M RISE/FALL TIME (ms) (Typ. Ta=25 ˚C, VR =7.5 V, λ=560 nm, Vo=2.5 V) tr tf CATHODE ANODE Tolerance unless otherwise noted: ±0.2 Active area position accuracy: X, Y/KA3 ±0.3 Electrodes 0.4 3.2 ± 0.2 0.4 0.13 2.3 2.2 1.4 ± 0.1 2.7 (4 ×) 0.5 CENTER OF ACTIVE AREA ACTIVE AREA 0.32 × 0.46 2.0 ± 0.1 0.25 ± 0.15 0.6 1.1 ± 0.1 PHOTOSENSITIVE SURFACE KPICB0078EC I Dimensional outlines (unit: mm) I Spectral response 0.1 0.2 0.3 0.4 0.5 0.7 0.9 0.6 0.8 1.0 200 400 600 800 WAVELENGTH (nm) 1000 1200 RELATIVE SENSITIVITY (Typ. Ta=25 ˚C, VR =5 V) S9066-111 S9067-101 HUMAN EYE SENSITIVITY KPICB0076EB I Dark current vs. ambient temperature KPICB0115EA I Rise/fall times vs. load resistance S9066-111 S9067-101 PHOTOSENSITIVE SURFACE 10˚ 10˚ 0.75 ± 0.15 10˚ 10˚ 0.25+0.15 -0.1 1.0 2.0 2.0 (DEPTH 0.15) ANODE (ANODE) NC CATHODE Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Values in parentheses indicate reference value. 5.2 ± 0.3 (INCLUDIG BURR) CENTER OF ACTIVE AREA ACTIVE AREA 0.46 × 0.32 5.2 ± 0.3 (INCLUDIG BURR) (SPECIFIED AT THE LEAD ROOT) (2 ×) 1.0 (DEPTH 0.15) 2.5 ± 0.2 5.0 2.05 ± 0.2 5.0 16.5 ± 1.0 (0.8) (1.0) 1.2 ± 0.2 1.27 1.27 1.27 (4 ×) 0.55 (4 ×) 0.45 KPICA0050EE KPICA0051EC I Operating circuit example KPICC0091EB PHOTODIODE FOR SIGNAL OFFSET CATHODE ANODE C L R L Vout REVERSE BIAS POWER SUPPLY THE DRAWING SURROUNDED BY THE DOTTED LINE SHOWS A SCHEMATIC DIAGRAM OF THE PHOTO IC. CURRENT AMP (APPROX. 30000 times) PHOTODIODE FOR SIGNAL DETECTION INTERNAL PROTECTION RESISTANCE (APPROX. 150 /K57 ) The photo IC diode must be reverse- biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance C L in parallel with load resistance RL as a low-pass filter. Cut-off frequency fc =2πC LR L 1.. I Linearity (S9066-111) KPICB0083EB