S9015 HTSEMI | Alldatasheet
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TRANSISTOR(PNP)
FEATURES
z Complementary to S9014 MARKING: M6 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -45 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.1 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEO I C = -0.1mA, I B =0 -45 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-50 V, I E =0 -0.1 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μ A DC current gain h FE V CE =-5V, I C = -1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =-100mA, I B = -10mA -0.3 V Base-emitter saturation voltage V BE (sat) I C =-100mA, I B =-10mA -1 V Transition frequency f T V CE =-5V, I C = -10mA 30MHz
150 MHz
T -23 1. BASE 2. EMITTER 3. COLLECTOR S901 5 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu