S9015 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary toS9014 MARKING :M6 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO -50 V Collector-EmitterV oltage V CE O -45 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC -0.1 A Collector Pow er Dissipation PC 0.2 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Sym bol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC = -100μA, IE=0 -50 V Collector-emitter breakdow n voltage V CEO IC = -0.1mA, IB =0 -45 V Emitter-base breakdow n voltage V EBO IE=-100μA, IC =0 -5 V Collector cut-off current ICBO V CB =-50 V ,IE=0 -0.1 μA Emittercut-offcurrent IEBO V EB = -5V , IC =0 -0.1 μA DC current gain hFE V CE =-5V ,IC = -1mA 200 1000 Collector-emitter saturationvoltage V CE (sat) IC =-100mA, IB = -10mA -0.3 V Base-emitter saturation voltage V BE (sat) IC =-100mA, IB =-10mA -1 V Transition frequency fT V CE =-5V , IC = -10mA f=30MHz
150 MHz
(PN P) 1. BASE 2. EMITTER SOT -23 3. COLLECTO S9015
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics S9015