S9014W HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 50 V Collector-EmitterV oltage V CEO 45 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 100 m A Collector Pow er Dissipation PC 200 m W StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Testconditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC =100μA,IE=0 50 V Collector-em itterbreakdown voltage V CEO IC =0.1mA,IB =0 45 V Emitter-basebreakdow n voltage V EBO IE=-100μA,IC =0 5 V Collector cut-offcurrent ICBO V C B =50V,IE=0 0.1 μA Collector cut-offcurrent ICEO V C E=35V,IB =0 0.1 μA Emittercut-offcurrent IEBO V EB =3V,IC =0 0.1 μA DC currentgain hFE V C E=5V,IC =1mA 200 1000 Collector-em ittersaturationvoltage V CE(sat) IC =100mA, IB = 5mA 0.3 V Base-emitter saturation voltage V BE(sat) IC =100mA, IB = 5mA 1 V Transition frequency fT V C E=6V, IC = 20mA f=30MHz
150 MHz
S9014W (N PN ) 1. BASE 2. EMITTER SOT -323 3. COLLECTO
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. S9014W Typical Characteristics