S9014 HTSEMI | Alldatasheet
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TRANSISTOR (NPN)
FEATURES
z Complementary to S9015 MARKING: J6 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 50 V V CEO Collector-Emitter Voltage 45 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.1 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =50 V , I E =0 0.1 μ A Collector cut-off current I CEO V CE =35V , I B =0 0.1 μ A Emitter cut-off current I EBO V EB = 3V , I C =0 0.1 μ A DC current gain h FE V CE =5V, I C = 1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =100 mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100 mA, I B = 5mA 1 V Transition frequency f T V CE =5V, I C = 10mA 30MHz
150 MHz
T -23 1. BASE 2. EMITTER 3. COLLECTOR S901 4 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu S901 4