S9014 MICRO-ELECTRONICS | Alldatasheet
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DESCRIPTION
The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature -55~135 ℃ Operating Temperature 135 ℃ Lead Temperature (Soldering, <10s) 230 ℃ Maximum Power Dissipation Total Disspation at 25℃ Ambient Temperature 0.4W Maximum Voltage VCBO Collector to Base Voltage 50V VCEO Collector to Emitter Voltage 45V VEBO Emitter to Base Voltage 5V IC Collector Current (continuous) 0.5A ELECTRICAL CHARACTERISTICS (Ta=25℃ Unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS TEST CONDITIOMNS HFE1 DC current gain 60 1000 Ic=1mA Vce=5V VCE(SAT) Collector Saturation Voltage 0.3 V Ic=100mA Ib=10mA VBE Base-Emitter Voltage 0.85 V Ic=1mA V CE=5V BVCEO Collector to Emitter Breakdown Voltage 45 V Ic=1mA Ib=0 BVCBO Collector to Base Breakdown Voltage 50 V Ic=100 μA Ie=0 BVEBO Emitter to Base Breakdown Voltage 5 V Ie=100 μA Ic=0 ICBO Collector Cutoff Current 0.1 μA Vcb=50V Ie=0 fT Transition frequency 150 Ic=10mA Vce=5V f=30MH Z CCB Collector to Base Capacitance 6 pF Vcb=10V Ic=0 f=1MH Z Note: HFE1 classification: A: 60~150 B: 100~300 C: 200~600 D: 400~1000 REV:0 25-May-05 MICRO ELECTRONICS 1 2 3 S9014: 1. Emitter 2. Base 3. Collect MICRO ELECTRONICS LTD. 7th Floor Enterprise Square Three,39 Wang Chiu Road, Kowloon Bay, Hong Kong.