CL117 MICRO-ELECTRONICS | Alldatasheet
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n $ CL117 rE y NPN w SILICON TRANSISTOR DESCRIPTION TO-92F (LEAD FORM to MELF-002) CLI17_ is NPN silicon planar transistor designed for general esean purpose high voltage and video y > AUN amplifier application. T "| LJ pasa asain Pe i 94840018) ABSOLUTE MAXIMUM RATINGS Bottom view Collector-Emitter Voltage VCEO 120V Collector-Base Voltage VCBO 120V Emitter-Base Voltage VEBO 5V Collector Current Continuous Ic 100mA Total Power Dissipation @ Ta<25°C Ptot 625mW Operating & Storage Junction Temperature Tj, Tstg -55 to +150°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT CONDITIONS Collector-Emitter Breakdown Voltage LVCEO* 120 VV IC=30mA IB=0 Collector-Base Breakdown Voltage BVCBO 120 Vv Ic=0.1mA ITE=0 Emtter-Base Breakdown Voltage BVEBO 5 Vv TE=0.01mA IC=0 Collector Cutoff Current ICBO 100 nA VCB=75V IE=0 Emtter Cutoff Voltage IEBO 100 nA VEB=4V IC=0 D.C. Current Gain HFE* 25 IC=10mA VCE=10V
30 IC=30mA VCE=10V
Collector-Emitter Saturation Voltage VCE(sat)* 0.2 VY ICc=50mA IB=S5mA Base-Emitter Saturation Voltage VBE(sat)* 0.9 VV IC=50mA IB=5mA Current Gain Bandwidth Product fT 40 MHz IC=30mA VCE=10V f=20MHz Output Capacitance Cob 6 TYP. pF VCB=10V f=1MHz * Pulse test : pulse width <300pS, duty cycle < 1%. Yt FP 4, N\\CRO ELECTRONICS LTD. ZZ, 38, Hung To Road, Micratron Bulding, Kwun Tong, Kowloon, Hong Kong, dw Kun Tong P.O. Box 69477 Hong Kong, Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5 Jul-98