MSB48D

MRB48D MICRO-ELECTRONICS | Alldatasheet

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= as H MYB48D

7 MOB48D

This series of solid state indicators are 4.8mm diameter rN ee flangeless LED lamp. as | 034 | MRB48D is a GaAsP/GaAs red chip with red diffused lens. lan Lo LI MSB48D is a GaP/GaP red chip with red diffused lens. i i ~Y aw yy, al MGB48D is a GaP/GaP green chip with green diffused lens. 078009) a8 “+ 004" MYB48D is a GaAsP/GaP yellow chip with yellow diffused lens. mn (on MOB48D is a GaAsP/GaP orange chip with orange diffused lens| os | KR " MOBA8DR is high efficiency red chip with red diffused lens. oon” | ; 2 co ostose @ All Dimension in mm (inch) @ No Scale e Tol: +/- 03mm ABSOLUTE MAXIMUM RATINGS M M M M M M R 8 °o G oO Yy B B B B B B 8 8 8 8 8 8 D D D D D D _ R Power Disipaton @ THIS Leo | [0 | [oo fo] mw Forward Curent, DC(F) [ao [is 30 [30 | 30 | 20 | mal Reverse Voltage Ds fsts,ts{[s 1s} Vv Operating & Storage Temperature Range -55 to +100 Lead Soldering Temperature (1/16” from body) ELECTRO-OPTICAL CHARACTERISTICS

8 M M M M M U

Y R s ° ° Y N M B B B B B I PARAMETER B 4 4 4 4 8 T CONDITIONS oO 8 8 a 8 D D D D D L R Forward Voltage MAX| VF | 24 | 30 | 3.0 | 30 | 30 | 3.0 | V | IF=20mA Reverse Breakdown Voltage MIN| BVR | 5 5 5 5 5 5 | V | IR=100uA Luminous Intensity MIN| IV 1 | 0g* | 14 | 16 | 14 | 10 | med} IF=20mA TYP 15 | 12* | 20 | 22 | 20 | 13 | med | IF=20mA Peak Wavelength TyP| ap | 660 | 700 | 570 | 585 | 630 | 640 | nm | IF=20mA Spectral Line Half Width TYP] Ad | 20 | 100 | 35 | 40 | 40 | 40 | nm | IF=20mA _ * IV @IF=10mA. Rev.A, MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. EE ooeeeeeerrrerlrlrlrleeee_E_E_ae_eeeEEE——— EE