ME12629B-R MICRO-ELECTRONICS | Alldatasheet
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Technical content
Power Dissipation Pd 8*120mW Continuous Forward Current IF 8*30mA Reverse Voltage VR 5V Operating Temperature Range Topr -20 to +70°C Storage Temperature Range Tstg -25 to +75°C ELECTRO-OPTICAL CHARACTERISTICS (CHIP) (Ta=25°C) PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Forward Voltage V F 3.2 3.6 V IF=20mA Reverse Current IR 100 μA VR=5V Dominant Wavelength λd 470 475 nm IF=20mA Spectral Line Half Width Δλ 30 nm IF=20mA ELECTRO-OPTICAL CHARACTERISTICS (ME12629B-R) (Ta=25°C) PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Forward Current/Chip IF 16 mA VS=5V DC,R=110Ω Reverse Current/Chip IR 100 μA VR=5V Dominant Wavelength λd 470 475 nm VS=5V DC,R=110Ω Spectral Line Half Width Δλ 30 nm VS=5V DC,R=110Ω Brightness B 180 200 cd/m2 VS=5V DC,R=110Ω CAUTION Static eletricity and surge damages the backlight ,It is recommended to use a wrist band or anti-eletrostatic glove when handling the backlight . All devices,equipment and machinery must be properly grounded. REV : A 10/5/2006 P 1 OF 2 MICRO ELECTRO NICS
Mechanical Outline: Recommended Circuit: (R=110Ω) REV : A 10/5/2006 P 2 OF 2