S9014 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S 9 01 4 TRANSISTOR (NPN)
FEATURES
z Complementary to S9015 MARKING: J6 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 50 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =50 V , I E =0 0.1 μ A Collector cut-off current I CEO V CE =35V , I B =0 1 μ A Emitter cut-off current I EBO V EB = 3V , I C =0 0.1 μ A DC current gain h FE V CE =5V, I C = 1mA 200 1000 Collector-emitter saturation voltage V CE (sat) I C =100 mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100 mA, I B = 5mA 1 V Transition frequency f T V CE =5V, I C = 10mA 30MHz
150 MHz
- BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com E,Sep,2016 JC(T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃
0.1 1 10 0.1 100 0 25 50 75 100 125 150 100 150 200 250 0.1 100 024 68 0.1 1 10 100 0.1 0.1 1 10 100 100 1000 0.1 1 10 100 0.01 0.1 0.1 1 10 100 100 1000 f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib — — C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V R (V) P C — — T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) COMMON EMITTER V CE = 5V V BE I C — — T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 20uA COMMON EMITTER T a =25 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA I B =2uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) f T — — h FE — — β=20 I C V BEsat — — T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 5V I C I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) β=20 T a =100 T a =25 I C V CEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =5V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) www.cj-elec.com 2www.cj-elec.com Typical Characteristics E,Sep,2016
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com E,Sep,2016
www.cj-elec.com 4www.cj-elec.com E,Sep,2016