S9014 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary toS9015 MARKING :J6 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 50 V Collector-EmitterV oltage V CE O 45 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 0.1 A Collector Pow er Dissipation PC 0.2 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-basebreakdow n voltage V CBO IC = 100μA, IE=0 50 V Collector-emitter breakdow n voltage V CEO IC = 0.1mA, IB =0 45 V Emitter-base breakdow n voltage V EBO IE=100μA, IC =0 5 V Collector cut-off current ICBO V CB =50 V , IE=0 0.1 A Collector cut-off current ICEO V CE =35V , IB =0 0.1 Emittercut-offcurrent IEBO V EB = 3V , IC =0 0.1 DC current gain hFE V CE =5V , IC = 1mA 200 1000 Collector-emitter saturationvoltage V CE (sat) IC =100 mA, IB = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) IC =100 mA, IB = 5mA 1 V Transition frequency fT V CE =5V , IC = 10mA f=30MHz
150 MHz
(NPN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO u A u A u S9014
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics S9014