S9013 HTSEMI | Alldatasheet
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TRANSISTOR(NPN)
FEATURES
z Complementary to S9012 z Excellent h FE linearity MARKING: J3 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 500 mA P C Collector Power Dissipation 300 mW T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 100 μ A I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C = 0.1mA I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =40V, I E =0 0.1 μ A Collector cut-off current I CEO V CE =20V, I B =0 0.1 μ A Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μ A h FE(1) V CE =1V, I C = 50mA 120 400 DC current gain h FE(2) V CE =1V, I C =500mA 40 Collector-emitter saturation voltage V CE (sat) I C =500mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz
150 MHz
FE(1) Rank L H J Range 120-200 200-350 300-400 SO T -23 1. BASE 2. EMITTER 3. COLLECTOR S901 3 Date:2011/05 www.htsemi.comsemiconductor JinYu
A,Apr,2011 S901 3 Date:2011/05 www.htsemi.comsemiconductor JinYu