S9013 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary toS9012 MARKING :J3 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 40 V Collector-EmitterV oltage V CE O 25 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 0.5 A Collector Pow er Dissipation PC 0.3 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sym bol Test conditions M in T yp M ax U nit Collector-basebreakdow n voltage V CBO IC = 100μA ,IE=0 40 V Collector-emitter breakdow n voltage V CEO IC = 0.1mA ,IB =0 25 V Emitter-base breakdow n voltage V EBO IE=100μA, IC =0 5 V Collector cut-off current ICBO V CB =40V , IE=0 0.1 uA Collector cut-offcurrent ICEO V CE =20V , IB =0 0.1 uA Emittercut-offcurrent IEBO V EB = 5V , IC =0 0.1 uA DC current gain hFE(1) V CE =1V ,IC = 50mA 120 400 hFE(2) V CE =1V ,IC =500mA 40 Collector-emitter saturationvoltage V CE (sat) IC =500mA, IB = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) IC =500mA, IB = 50mA 1.2 V Transition frequency fT V CE =6V , IC = 20mA f=30MHz
150 MHz
Range 120-200 200-350 300-400 (NPN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO S9013
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics S9013