S9012W JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors S9012W TRANSISTOR (PNP)

FEATURES

z Complementary to S9013W z Excellent h FE linearity MARKING: 2T1 ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 μ A Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μ A DC current gain h FE V CE =-1V, I C = -50mA 120 400 Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA, 30MHz

150 MHz

Collector output capacitance C ob V CB -10 V,I E =0,f= MHz 5 pF CLASSIFICATION OF h FE Rank L H J Range 120-200 200-350 300-400 SOT-323 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Sep,2014 JC(T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃

-1 -10 -100 100 1000 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -10 -100 0 25 50 75 100 125 150 100 150 200 250 -0.1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -1 -2 -3 -4 -5 -20 -40 -60 -80 f T —— I C h FE COMMON EMITTER V CE =-1V -500 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =25 T a =100 I C V CEsat -500 1000 100 -500 100 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a V BE I C T a =25 T a =100 COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 -500 I C V BEsat -300uA -270uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -240uA -210uA -180uA -150uA -120uA -90uA -60uA I B =-30uA COMMON EMITTER T a =25 www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Sep,2014 Typical Characteristics

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Sep,2014

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Sep,2014