S9012 HTSEMI | Alldatasheet
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Technical content
TRANSISTOR(PNP)
FEATURES
z Complementary to S9013 z Excellent h FE linearity MARKING: 2T1 MAXIMUM RATINGS (T A =25 unless otherwise noted℃ ) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -500 mA P C Collector Power Dissipation 300 mW T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 μ A Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 μ A Emitter cut-off current I EBO V EB = -5V, I C =0 -0.1 μ A DC current gain h FE V CE =-1V, I C = -50mA 120 400 Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA 30MHz
150 MHz
Collector output capacitance C ob V CB -10 V,I E =0,f= MHz 5 pF CLASSIFICATION OF h FE Rank L H J Range 120-200 200-350 300-400 SO T -23 1. BASE 2. EMITTER 3. COLLECTOR S901 2 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu S901 2