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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP)
FEATURES
MARKING: 2T1 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -500 mA P C Collector Power Dissipation 300 mW R ΘJA Thermal Resistance From Junction To Ambient 416 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-0.1mA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-0.1mA, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 uA Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 uA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.1 uA DC current gain h FE V CE =-1V, I C =-50mA 120 400 Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.6 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.2 V Transition frequency f T V CE =-6V,I C =-20mA, f=30MHz 150 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 5 pF CLASSIFICATION OF h FE RANK L H J RANGE 120-200 200-350 300-400 SOT–23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Oct,2014 JC(T
-1 -10 -100 100 200 300 400 -1 -10 -100 -10 -100 -1000 -0.1 -1 -10 -10 -100 500 0 25 50 75 100 125 150 100 200 300 400 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -20 -40 -60 -80 -100 f T —— I C h FE COMMON EMITTER VCE=-1V -500 Ta=100 Ta=25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 Ta=25 Ta=100 I C V CEsat -500 100 100 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz I E =0/ I C Ta=25 V CB / V EB C ob / C ib CAPACITANCE C (pF) VCE=-6V Ta=25 o C TRANSITION FREQUENCY f T (MHz) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) Pc —— Ta β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) Ta=25 Ta=100 -500 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -400uA -350uA -300uA -250uA -200uA -150uA -100uA I B =-50uA COMMON EMITTER Ta=25 www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Oct,2014 Typical Characteristics
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Oct,2014
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Oct,2014