S9012 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary toS9013 MARKING :2T1 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO -40 V Collector-EmitterV oltage V CE O -25 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC -0.5 A Collector Pow er Dissipation PC 0.3 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) CLASS IFICATION OF hFE Rank L H J Range 120-200 200-350 300-400 (PN P) 1. BASE 2. EMITTER SOT -23 3. COLLECTO Parameter Sym bol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC = -100 u A, IE=0 -40 V Collector-emitter breakdow n voltage V CEO IC = -1mA, IB =0 -25 V Emitter-base breakdow n voltage V EBO IE=-100 u A, IC =0 -5 V Collector cut-off current ICBO V CB =-40V , IE=0 -0.1 u A Collector cut-off current ICEO V CE =-20V , IB =0 -0.1 u A Emittercut-offcurrent IEBO V EB = -5V , IC =0 -0.1 u A DC current gain hFE V CE =-1V ,IC = -50mA 120 400 Collector-emitter saturationvoltage V CE (sat) IC =-500mA, IB = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) IC =-500mA, IB = -50mA -1.2 V Transition frequency fT V CE =-6V , IC = -20mA f=30MHz
150 MHz
Collector output capacitance C ob V CB =-10V ,IE=0,f=1MHz 5 pF S9012
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics S9012