S8980_S10810

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Front-illuminated FFT-CCDs for X-ray imaging S8980 S10810-11 www.hamamatsu.com 1 X-ray monitoring photodiode incorporated Resolution: 20 Lp/mm 1500 (H) × 1000 (V) pixel format Pixel size: 20 × 20 μm Coupled with FOS for X-ray imaging 100% fi ll factor Low dark signal Low readout noise MPP operation AC/DC X-ray source adapted Compact size High dynamic range: 12-bit Long-term stability Structure Parameter S8980 S10810-11 CCD structure Full frame transfer Fill factor 100% Cooling Non-cooled Number of pixels 1508 (H) × 1002 (V) Number of active pixels 1500 (H) × 1000 (V) Pixel size 20 (H) × 20 (V) μm Active area 30 (H) × 20 (V) mm Vertical clock phase 2 phases Horizontal clock phase 2 phases Output circuit Emitter follower without load resistor Dimensions 35.5 (H) × 23.2 (V) mm 41.0 (H) × 26.4 (V) mm Window FOS (scintillator on 1.5 mm FOP) These products are components for incorporation into medi- cal and industrial device. The S8980 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S8980 has 1.5 mega (1500 × 1000) pixels, each of which is 20 × 20 μm in size. The FOP (fi ber optic plate) used as an input window is as thin as 1.5 mm, making high resolution as well as highly resistant to X-ray irradiation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20 Lp/mm). The S10810-11 is an easy-to-use X-ray imaging module using the S8980, with added functions such as a cable assembly and X-ray trigger circuit. Features Applications Intra-oral X-ray imaging in dental diagnosis General X-ray imaging Non-destructive inspection

CCD area image sensors S8980, S10810-11 Absolute maximum ratings (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Storage temperature Tstg -20 - +70 °C Operating temperature Topr 0 - +40 °C Total dose irradiation D- - 5 0 G y OD voltage VOD -0.5 - +20 V RD voltage VRD -0.5 - +18 V SG voltage VSG -15 - +15 V OG voltage VOG -15 - +15 V RG voltage VRG -15 - +15 V TG voltage VTG -15 - +15 V Vertical clock voltage VP1V, VP2V -15 - +15 V Horizontal clock voltage VP1H, VP2H -15 - +15 V Vcc voltage Vcc 0 - +7 V Operating conditions (MPP mode, Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage VOD 12 15 - V Reset drain voltage VRD 12 13 14 V Output gate voltage VOG -0.5 2 5 V Substrate voltage Vss - 0 - V Vertical shift register clock voltage High VP1VH, VP2VH 036 V Low VP1VL, VP2VL -9 -8 -7 V Horizontal shift register clock voltage High VP1HH, VP2HH 036 V Low VP1HL, VP2HL -9 -8 -7 V Summing gate voltage High VsGH 036 V Low VsGL -9 -8 -7 V Reset gate voltage High VRGH 036 V Low VRGL -9 -8 -7 V Transfer gate voltage High VTGH 036 V Low VTGL -9 -8 -7 V +5 V power supply voltage Vcc 4.75 5 5.25 V Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Signal output frequency*1 f c-1- M H z Vertical shift register capacitance CP1v, CP2v - 60000 - pF Horizontal shift register capacitance S8980 CP1H, CP2H - 350 - pFS10810-11 - 550 - Summing gate capacitance S8980 CsG -2 0- pFS10810-11 - 220 - Reset gate capacitance S8980 CRG -2 0- pFS10810-11 - 220 - Transfer gate capacitance S8980 CTG - 250 - pFS10810-11 - 450 - Charge transfer effi ciency*2 CTE 0.99995 0.99998 - - DC output level*3 VOut 5 8 11 V Output impedance*3 Zo - 500 - Ω Power dissipation*3 *4 P - 75 - mW +5 V power supply current S8980 Icc -1- mAS10810-11 - 2 - *1: In case the of the S8980, maximum frequency strongly depends on a peripheral circuit and cable length. *2: Measured at half of the full well capacity. CTE is defi ned per pixel. *3: VOD=15 V *4: Power dissipation of the on-chip amplifi er

CCD area image sensors S8980, S10810-11 Electrical and optical characteristics (Ta=25 °C, VOD=15 V, unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Full well capacity Vertical Fw 100 200 - ke-Horizontal - 300 - Summing - 600 - CCD node sensitivity*5 Sv 1.0 1.4 - μV/e- Dark current (MPP mode)*6 DS - 250 2500 e -/pixel/s Readout noise*7 Ta=25 °C Nr -9 0- e- rmsTa=-40 °C -6 0- Dynamic range*8 DR - 3333 - - X-ray response non-uniformity*9 *10 XRNU - ±10 ±30 % Blemish*11 Point defects*12 White spots -- 2 0 -Black spots - - 20 Cluster defects*13 --3 Column defects*14 --1 X-ray resolution*9 ∆R 15 20 - Lp/mm *5: VOD=15 V, RL (load resistor of emitter follower)=1 kΩ *6: Dark signal doubles for every 5 to 7 °C. *7: Operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity *10: XRNU (%) = Noise / Signal × 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position *11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information. *12: White spots > 10 times of Max. Dark signal (2500 e -/pixel/s) Black spots > 50% reduction in response relative to adjacent pixels, measured at half of the full well capacity *13: Continuous 2 to 9 point defects *14: Continuous ≥ 10 point defects Resolution (S10810-11) Response (S10810-11) Spatial frequency (line pairs/mm) (X-ray source: 70 kVp, Filter: ABS 1.5 mmt) CTF 0.1 1.0 0.8 0.9 0.6 0.7 0.4 0.5 0.2 0.3 2004 28 1 0 61 2 1 4 1 6 1 8 Absorbed dose (µGy) (X-ray source: 70 kVp, Filter: ABS 1.5 mmt) Output voltage (mV) 300 200 100 3000 100 200 KMPDB0355EA KMPDB0356EA

CCD area image sensors S8980, S10810-11 Pixel format Left ← Horizontal direction → Right Blank Optical black Isolation Effective Isolation Optical black Blank 2 2 1 1500 1 0 2 Top ← Vertical direction → Bottom Isolation Effective Isolation 1 1000 1 KMPDC0163EA Device structure VS1 VS2 VS3 VS4 VS999 VS1000 VS1001 VS1002 1496 1497 1498 1499 1500 23 999998 1000 S1499 S1500 S1501 S1502 S1503 S1504 X-ray irradiation monitoring photodiode PD P1V’ P2V’ TG’ SS RG’ OG SG’ P1H’ P2H’ OS OD RD

CCD area image sensors S8980, S10810-11 P1V OD RD Vcc P2V TG P1H P2H SG RG P1V’ 51 k 2.2 µ 2.2 µ 7.5 k 10 k Molex 52745-1497 0.1 µ P2V’ TG’ P1H’ SS CCD chip OD OG RD OS PD 100 P2H’ SG’ RG’ Vcc 1 Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V OUT Trigger A Trigger B (S8980) (S10810-11) GND On-board circuit KMPDC0348EB

CCD area image sensors S8980, S10810-11 Parameter Symbol Min. Typ. Max. Unit P1V, P2V, TG Pulse width*15 tpwv 30 60 - μs Rise and fall times tprv, tpfv 200 - - ns P1H, P2H Pulse width tpwh 100 500 - ns Rise and fall times*15 tprh, tpfh 5 - - ns Duty ratio - - 50 - % SG Pulse width tpws 100 500 - ns Rise and fall times tprs, tpfs 3 - - ns Duty ratio - - 50 - % RG Pulse width tpwr 10 50 - ns Rise and fall times tprr, tpfr 3 - - ns TG-P1H Overlap time tovr 18 36 - μs *15: The clock pulses should be overlapped at 50% of maximum amplitude. Timing chart KMPDC03 P1V P2V, TG*3 P1H P2H, SG RG OUT *1: Trigger A (S8980) is the same as AC/DC X-ray exposure form. *2: Low active trigger pulse *3: TG terminal can be short-circuited to P2V terminal. P2V, TG P1H P2H, SG RG OUT Tpwv VD: Vertical dummy Enlarged view Tovr Tpwh, Tpws Tpwr D1 D2 S1 S2, S3, S4, ... , S1502, S1503, S1504 D3 D4 AC X-ray exposure (Trigger A)*1 Trigger B (S10810-11)*2 DC X-ray exposure (Trigger A)*1 Pre-integration period Integration period Readout period KMPDC0349EB

CCD area image sensors S8980, S10810-11 * The shield of cable and the shroud of MDR connector are short-circuited. Take due care of EMC and ESD when connected to 0 V reference and the ground. 2000 Cable MDR connector (3M 10136-3000PE; 36 terminals) Ferrite CCD sensor Pin no. 1 2 17 18 19 20 35 36 Shroud KMPDA0244EA KMPDA0169EE Entire view Dimensional outlines (unit: mm) S8980 S10810-11 19.5 6.55 FOS 1.72.0 3.1 1.0 1.5 Active area 3.6 23.2 35.5 Molex 52745-1497 1 → 14 Scintillator Connector FOP Alumina substrate CCD chip

CCD area image sensors S8980, S10810-11 CCD sensor Pin connections S8980 Pin no. Symbol Description Remark

1 Vcc Analog power +5 V

2 Trigger A Trigger A output

3 SG Summing gate

4 P2H CCD horizontal register clock-2

5 P1H CCD horizontal register clock-1

6 Reserve Should be opened

7 RG Reset gate

8 RD Reset drain

9 OD Output transistor drain

10 OUT Signal output

11 GND Ground

12 TG Transfer gate

13 P2V CCD vertical register clock-2

14 P1V CCD vertical register clock-1

26.4 Cable 3.5 9.4 5.3 41.0 306.85 Active area KMPDA0245EB

CCD area image sensors S8980, S10810-11 Pin no. Symbol Description Remark

1 GND Ground

2 Vcc +5 V power supply

3 SG Summing gate Same timing as P2H

4 Trigger B Trigger B output

5 RG Reset gate

7 Reserve Should be opened

9 RD Reset drain

11 OD Output transistor drain

13 OUT Sensor output

15 GND Ground

17 P1V CCD vertical register clock-1

18 Reserve Should be opened

19 Reserve Should be opened

20 P2H CCD horizontal register clock-2

22 P1H CCD horizontal register clock-1

24 GND Ground

26 RD Reset drain

28 OD Output transistor drain

30 GND Ground

32 OUT Sensor output

34 P2V CCD vertical register clock-2

36 TG Transfer gate Same timing as P2V

CCD area image sensors S8980, S10810-11 Cat. No. KMPD1123E06 Apr. 2014 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of April, 2014.

• Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prev ent electrostatic damage due to electrical charges from friction.
• Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
• Provide ground lines or ground connection with the work-fl oor, work-desk and work-bench to allow static electricity to discharge.
• Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measur es stated above. Implement these measures according to the am ount of damage that occurs. Precautions Electrostatic countermeasures
• This product is warranted for a period of 12 months after the date of the shipment. The warranty is limited to replacement or repair of any defective product due to defects in workmanship or materials used in manufacture. The warranty does not cover loss or damage caused by natural disaster, misuse (including modifi cations and any use not complying with the environment, application, usage and storage conditions described in this datasheet), or total radiation dose over 50 Gy (incident X-ray energy: 70 kVp) even within the warranty period. Notice