S8980

S8980 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Sensor has X-ray monitoring photodiode /K6C Compactness 5.1 mm thickness excluding I/O connector part /K6C High dynamic range: 12 bit /K6C Long-term stability For use under 100,000 shots (60 kVp, 30 mR X-ray irradiation) /K6C Resolution: 20 Lp/mm /K6C 1500 (H) × 1000 (V) pixel format /K6C Pixel size: 20 × 20 µm /K6C Coupled with FOS for X-ray imaging /K6C 100 % fill factor /K6C Low dark signal /K6C Low readout noise /K6C MPP operation /K6C AC/DC X-ray source adapted

Applications

/K6C General X-ray imaging /K6C Non-destructive inspection /K6C Intra-oral X-ray imaging in dental diagnosis IMAGE SENSOR CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging S8980, S8981-02 S8980 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8980 has 1.5 mega (1500 × 1000) pixels each of which is 20 × 20 µm. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making S8980 very reliable even over a long-term operation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20 Lp/mm). S8981-02 is an easy-to-use X-ray imaging module using S8980, with added functions such as a cable assembly and X-ray trigger circuit. S8981- 02 is advanced type for S8981 and adapted both AC and DC X-ray sources. I Selection guide Type No. Cooling Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] S8980 S8981-02 Non-cooled 1508 × 1002 1500 × 1000 30 × 20 I General ratings Parameter S8980 S8981-02 CCD structure Full frame transfer Fill factor 100 % Number of active pixels 1500 (H) × 1000 (V) Pixel size 20 (H) × 20 (V) µm Active area 30 (H) × 20 (V) mm Vertical clock phase 2 phase Horizontal clock phase 2 phase Output circuit Emitter follower without load resistance Dimensional outline 35.5 (H) × 23.2 (V) mm 38.7 (H) × 26.3 (V) mm Reliability 100,000 shots at 60 kVp, 30 m Roentgen Window Scintillator on 1.5 mm FOP Other MPP mode (low dark current operation), module (S8981-02)

CCD area image sensor S8980, S8981-02 I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Storage temperature Tstg -20 - +70 °C Operating temperature Topr 0 - +40 °C OD voltage V OD -0.5 - +20 V RD voltage VRD -0.5 - +18 V SG voltage V SG -15 - +15 V OG voltage VOG -15 - +15 V RG voltage V RG -15 - +15 V TG voltage VTG -15 - +15 V Vertical clock voltage V P1V, VP2V -15 - +15 V Horizontal clock voltage VP1H, VP2H -15 - +15 V Vcc voltage Vcc 0 - +7 V I Operating conditions (MPP mode, Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage VOD 12 15 - V Reset drain voltage V RD 12 13 14 V Output gate voltage VOG -0.5 2 5 V Substrate voltage Vss - 0 - V High VP1VH, VP2VH 0 3 6 VVertical shift register clock voltage Low VP1VL, VP2VL -9 -8 -7 V High V P1HH, VP2HH 036VHorizontal shift register clock voltage Low V P1HL, VP2HL -9 -8 -7 V High VsGH 0 3 6 VSumming gate voltage Low VsGL -9 -8 -7 V High V RGH 036VReset gate voltage Low V RGL -9 -8 -7 V High VTGH 0 3 6 VTransfer gate voltage Low VTGL -9 -8 -7 V +5 V power supply voltage Vcc 4.75 5 5.25 V I Electrical characteristics (Ta=25 °C) Parameter Symbol Remark Min. Typ. Max. Unit Signal output frequency fc * 1 -15 M H z Vertical shift register capacitance CP1v, CP2v - 60,000 - pF S8980 - 350 -Horizontal shift register capacitance S8981-02 C P1H, CP2H - 550 - pF S8980 - 20 -Summing gate capacitance S8981-02 CsG - 220 - pF S8980 - 20 -Reset gate capacitance S8981-02 CRG - 220 - pF S8980 - 250 -Transfer gate capacitance S8981-02 CTG - 450 - pF Charge transfer efficiency CTE * 2 0.99995 0.99998 - - DC output level VOut *3 5 8 11 V Output impedance Zo * 3 - 500 - Ω Power dissipation P *3 *4 - 75 - mW S8980 - 1 -+5 V power supply current S8981-02 Icc -2- mA *1: S8980 only. In case of S8981-02, maximum frequency is strongly depend on peripheral circuit and cable length. *2: Measured at half of the full well capacity. CTE is defined per pixel. *3: V OD=15 V *4: Power dissipation of the on-chip amplifier.

CCD area image sensor S8980, S8981-02 VS1 VS2 VS3 VS4 VS999 VS1000 VS1001 VS1002 1496 1497 1498 1499 1500 23 999998 1000 S1499 S1500 S1501 S1502 S1503 S1504 X-RAY IRRADIATION MONITORING PHOTODIODE PD P1V ’ P2V ’ TG ’ SS RG ’ OG SG ’ P1H ’ P2H ’ OS OD RD I Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, VOD=15 V) Parameter Symbol Remark Min. Typ. Max. Unit Vertical 100 200 - Horizontal - 300 -Full well capacity Summing Fw - 600 - ke- CCD node sensitivity Sv *5 1.0 1.4 - µV/e- Dark current (MPP mode) DS * 6 - 250 2,500 e -/pixel/s Readout noise Nr *7 - 60 - e-rms Dynamic range DR * 8 - 3333 - - X-ray response non-uniformity XRNU *9, *10 - ±10 ±30 % White spots - - 20Point defects *12 Black spots - - 20 Cluster defects * 13 --3Blemish *11 Column defects *14 --1 X-ray resolution ∆R *9 15 20 - Lp/mm *5: VOD=15 V, RL(load resistance of emitter follower)=1 kΩ . *6: Dark signal doubles for every 5 to 7 °C. *7: -40 °C, operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *10: XRNU (%) = Noise / Signal × 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position. *11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information. *12: White spots > 10 times of Max. Dark signal (2,500 e -/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *13: continuous 2 to 9 point defects. *14: continuous > 10 point defects. I Device structure KMPDC0163EA I Pixel format ← Left Horizontal Direction → Right Blank Optical black Isolation Effective Isolation Optical black Blank 2 2 1 1500 1 0 2 Top ← Vertical direction → Bottom Isolation Effective Isolation 1 1000 1

CCD area image sensor S8980, S8981-02 KMPDC0215EA P1V P2V, TG *17 P1H P2H, SG RG OUT *15: Trigger A (S8980) is the same as AC/DC X-ray exposure form. *16: Low active trigger pulse *17: TG terminal can be short-circuited to P2V terminal. P2V, TG P1H P2H, SG RG OUT Tpwv VD: VERTICAL DUMMY ENLARGED VIEW Tovr Tpwh, Tpws Tpwr D1 D2 S1 S2, S3, S4, ... , S1502, S1503, S1504 D3 D4 AC X-RAY EXPOSURE (Trigger A) *15 Trigger B (S8981-02) *16 DC X-RAY EXPOSURE (Trigger A) *15 PRE-INTEGRATION PERIOD INTEGRATION PERIOD READOUT PERIOD I Timing chart Parameter Symbol Remark Min. Typ. Max. Unit Pulse width tpwv * 18 30 60 - µsP1V, P2V, TG Rise and fall time tprv, tpfv 200 - - ns Pulse width tpwh 100 500 - ns Rise and fall time tprh, tpfh *18 5 - - nsP1H, P2H Duty ratio - 50 - % Pulse width tpws 100 500 - ns Rise and fall time tprs, tpfs 3 - - nsSG Duty ratio - 50 - % Pulse width tpwr 10 50 - nsRG Rise and fall time tprr, tpfr 3 - - ns TG-P1H Overlap time tovr 18 36 - µs *18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. I On-board circuit P1V OD RD Vcc P2V TG P1H P2H SG RG P1V ’ 51 k 2.2 µ 2.2 µ 7.5 k 10 k molex 52745-1417 0.1 µ P2V ’ TG ’ P1H ’ SS CCD CHIP OD OG RD OS PD 100 P2H ’ SG ’ RG ’ Vcc 1 Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V OUT Trigger A Trigger B (S8980) (S8981-02) GND KMPDC0214EB KMPDC0215EA

CCD area image sensor S8980, S8981-02 I Dimensional outlines (unit: mm) KMPDA0169EB S8980 I Pin connections (Connector on CCD package) Pin No. Symbol Description Remark

1 Vcc Analog power +5 V

2 Trigger A Trigger A output

3 SG Summing gate

4 P2H CCD horizontal register clock-2

5 P1H CCD horizontal register clock-1

6 Reserve Should be opened

7 RG Reset gate

8 RD Reset drain

9 OD Output transistor drain

10 OUT Signal output

11 GND Ground

12 TG Transfer gate

13 P2V CCD vertical register clock-2

14 P1V CCD vertical register clock-1

19.5 6.55 19.7 FOP 1.52.0 3.1 ± 0.3 1.0 1.5 C1.0 30.0 ACTIVE AREA 3.6 3.0 20.0 FOP 22.1 0.55 0.55 23.2 ± 0.4 FOP 31.5 35.5 ± 0.5 molex 52745-1417 1 → 14 a 1.9 1.0 SCINTILLATOR CONNECTOR FOP ALUMINA SUBSTRATE CCD CHIP

CCD area image sensor S8980, S8981-02 S8981-02 G Entire view G CCD sensor KMPDA0189EA 2000 CABLE MDR CONNECTOR (3M 10136-3000PE; 36 TERMINALS) FERRITE CCD SENSOR PIN No.1 2 17 18 19 20 35 36 SHROUD 13.6 4.0 30.0 5.2 ACTIVE AREA3.5(4 ×) R2.5 4.0 1.01.3 20.0 26.3 3.15 3.15 3.5 5.1 7.4 10.2 9.0 38.7 32.66.1 CABLE 3.5 1.52.35.1 8.9 R2.0R2.0 6.0 1.35.0 (30 degrees) KMPDA0190EA * The shield of cable and the shroud of MDR connector are electrically connected each other. They are short-circuited, so there is no electrical contact to any other positions.

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KMPD1084E02 Sept. 2006 DN CCD area image sensor S8980, S8981-02 I Pin connections Pin No. Symbol Description Remark 1G N D Ground

2 Vcc +5 V power supply

3S G Summing gate Same timing as P2H

4 Trigger B Trigger B output

7 Reserve Should be opened

11 OD Output transistor drain

13 OUT Sensor output

15 GND Ground

17 P1V CCD vertical register clock-1

18 Reserve Should be opened

19 Reserve Should be opened

20 P2H CCD horizontal register clock-2

22 P1H CCD horizontal register clock-1

24 GND Ground

26 RD Reset drain

28 OD Output transistor drain

30 GND Ground

32 OUT Sensor output

34 P2V CCD vertical register clock-2

36 TG Transfer gate Same timing as P2V

I Precautions for use (Electrostatic countermeasures) *Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. *Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis- charge. *Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.