S8745-01

S8745-01 HAMAMATSU | Alldatasheet

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Photodiode and preamp integrated with feedback resistance and capacitance S8745-01, S8746-01 S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features Applications /K6C Si photodiode for UV to near IR precision photometry /K6C Small hermetic sealed package with quartz window S8745-01: TO-5 S8746-01: TO-8 /K6C Active area S8745-01: 2.4 × 2.4 mm S8746-01: 5.8 × 5.8 mm /K6C FET input operational amplifier with low power dissipation /K6C Built-in Rf=1 GΩ and Cf=5 pF /K6C Variable gain with an externally connected resistor /K6C Low noise and NEP /K6C Package with shielding effect /K6C Resistant to EMC noise /K6C Spectrophotometry /K6C General-purpose optical measurement I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Supply voltage (op amp) Vcc ±20 V Power dissipation P 500 mW Operating temperature Topr -20 to +60 °C Storage temperature Tstg -30 to +80 °C I Electrical and optical characteristics (Typ. Ta=25 °C, Vcc=±15 V, RL=1 MΩ , unless otherwise noted) Parameter Symbol Condition S8745-01 S8746-01 Unit Spectral response range λ 190 to 1100 nm Peak sensitivity wavelength λp 960 nm Feedback resistance (built-in) Rf 1 G Ω Feedback capacitance (built-in) Cf 5 pF λ=200 nm 0.12Photo sensitivity S λ=λp0 . 5 2 V/nW Dark state f=10 Hz 6 7Output noise voltage Vn Dark state, f=20 Hz 5 6 µVrms/Hz1/2 λ=λp, f=10 Hz 11 15Noise equivalent power NEP λ=λp, f=20 Hz 11 15 fW/Hz1/2 Output offset voltage Vos Dark state ±4 mV Cut-off frequency fc -3 dB 32 Hz Output voltage swing Vo 13 V Supply current Icc Dark state 0.3 mA S8745-01, S8746-01 may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.

Si photodioe with preamp S8745-01, S8746-01 + R L TO-8 PACKAGE Rf (EXTERNAL CONNECTED) R L is the input impedance to the next-stage circuit when viewed from the OUT terminal. Rf=1 G Ω (BUILT-IN) Cf=5 pF (BUILT-IN) WINDOW (QUARTZ) 0.1 µF 0.1 µF Vcc+ Vcc-NC PHOTODIODE + R L TO-5 PACKAGE Rf (EXTERNAL CONNECTED) R L is the input impedance to the next-stage circuit when viewed from the OUT terminal. Rf=1 G Ω (BUILT-IN) Cf=5 pF (BUILT-IN) WINDOW (QUARTZ) 0.1 µF 0.1 µF Vcc+ Vcc-NC PHOTODIODE Figure 5 Application circuit example S8745-01 and S8746-01 use a package with the guard ring effect provided. To make it effective during measurement, the package leads (pin 5 for S8745-01; pins 5 and 11 for S8746-01) should be connected to the ground line. When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon standoff for the leads. Note) A tantalum or ceramic capacitor of 0.1 to 10 µF must be connected to the supply voltage leads (pins 3 and 9 for S8745-01; pins 1 and 4 for S8746-01) as a bypass capacitor used to prevent the device from oscillation. KSPDC0048EA KSPDC0049EA S8745-01 S8746-01

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Si photodioe with preamp S8745-01, S8746-01 Cat. No. KSPD1065E01 Dec. 2004 DN BOTTOM VIEW PHOTOSENSITIVE SURFACE WINDOW 10.0 ± 0.2 14.0 ± 0.2 15.2 ± 0.3 5.1 ± 0.2 3.45 0.45 LEAD (13.5)10.16 ± 0.2 5.08 ± 0.2 10.16 ± 0.2 5.08 ± 0.2 Vcc+ NC NC Vcc- CASE +IN NC NC -IN GND CASE OUT Figure 6 Dimensional outlines (unit: mm) ➀ S8745-01 ➁ S8746-01 KSPDA0158EA KSPDA0159EA PHOTOSENSITIVE SURFACE WINDOW 3.0 ± 0.1 8.2 ± 0.1 9.15 ± 0.2 6.4 ± 0.2 4.7 0.45 LEAD (20) 5.84 ± 0.2 0.5 MAX. 1.2 MAX. NC NC Vcc+ OUT CASE -IN NC +IN Vcc- GND BOTTOM VIEW G ESD S8745-01 and S8746-01 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use:

• To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor (1 MΩ ).
• A semiconductive sheet (1 MΩ to 100 MΩ ) should be laid on both the work table and the floor in the work area.
• When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ .
• For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0.1 MΩ /cm 2 to 1 GΩ /cm2. G Wiring If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection. Precautions for Use