S8664 HAMAMATSU | Alldatasheet
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/K6C High sensitivity at visible range /K6C Low noise /K6C High gain /K6C Low capacitance /K6C Low-light-level measurement /K6C Analytical equipment ˙ General ratings / Absolute maximum ratings Absolute maximum ratings Effective *2 active area size Effective active areaType No. Dimensional outline /Window material *1 Package (mm) (mm 2) Operating temperature Topr (°C) Storage temperature Tstg (°C) S8664-02K φ0.2 0.03 S8664-05K φ0.5 0.19 S8664-10K φ1.0 0.78 S8664-20K ➀ /K TO-5 φ2.0 3.14 S8664-30K φ3.0 7.0 S8664-50K ➁ /K TO-8 φ5.0 19.6 -55 to +100 S8664-55 ➂ /E 5 × 5 25 S8664-1010 ➃ /E Ceramic 10 × 10 100 -20 to +60 -20 to +80 ˙ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range λ Peak * 3 sensitivity wavelength λp Photo sensitivity S M=1 λ=420 nm Quantum efficiency QE M=1 λ=420 nm Breakdown voltage VBR ID=100 µA Temperature coefficient of VBR Dark *3 current ID Cut-off frequency fc Terminal * 3 capacitance Ct Excess *3 Noise index λ=420 nm Gain M λ=420 nmType No. (nm) (nm) (A/W) (%) Typ. (V) Max. (V) (V/°C) Typ. (nA) Max. (nA) (MHz) (pF) S8664-02K 0.1 1 700 0.8 S8664-05K 0.2 1.5 680 1.6 S8664-10K 0.3 3 530 4 S8664-20K 0.6 6 280 11 S8664-30K 1 15 140 22 S8664-50K 3 35 60 55 S8664-55 5 50 40 80 S8664-1010 320 to 1000 600 0.24 70 400 500 0.78 10 100 11 270 0.2 50 *1: K: Borosilicate glass E: Epoxy resin *2: Area in which a typical gain can be obtained. *3: Values measured at a gain listed in the characteristics table.
I Spectral response I Quantum efficiency vs. wavelength I Dark current vs. reverse voltage I Gain vs. reverse voltage KAPDB0073EB KAPDB0074EB KAPDB0075EB KAPDB0076EB PHOTO SENSITIVITY (A/W) (Typ. M=50) WAVELENGTH (nm) 200 400 600 800 1000 1200 -20K/-30K/-50K S8664-55/-1010 100 QUANTUM EFFICIENCY (%) WAVELENGTH (nm) 200 400 600 800 1000 1200 (Typ. Ta=25 ˚C) -20K/-30K/-50K S8664-55/-1010 1 nA 1 µA (Typ. Ta=25 ˚C) 100 nA 1 pA 10 pA 10 nA 100 pADARK CURRENT REVERSE VOLTAGE (V) 100 200 300 400 500 S8664-50K S8664-30K S8664-10K S8664-02K S8664-1010 S8664-55 1000 (Typ. λ=420 nm) 100 GAIN REVERSE VOLTAGE (V) 200 300 400 500 -20 ˚C 0 ˚C 20 ˚C 40 ˚C 60 ˚C I T erminal capacitance vs. reverse voltage KAPDB0077EB 10 nF (Typ. Ta=25 ˚C, f=10 kHz) 1 nF 100 fF 100 pF 10 pF 1 pF TERMINAL CAPACITANCE REVERSE VOLTAGE (V) 0 100 200 300 400 500 S8664-30K S8664-55 S8664-10K S8664-02K S8664-50K S8664-1010
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. Cat. No. KAPD1012E04 Sept. 2005 DN Si APD S8664 series KAPDA0026EA I Dimensional outlines (unit: mm) KAPDA0027EA ➀ S8664-02K/-05K/-10K/-20K ➁ S8664-30K/-50K 2.8 (20) 4.2 ± 0.2 0.4 MAX. 5.9 ± 0.1 5.08 ± 0.2 S8664-02K 0.2 Type No. a S8664-05K 0.5 S8664-10K 1.0 S8664-20K 2.0 Y X 8.1 ± 0.1 9.1 ± 0.2 1.5 MAX. ACTIVE AREA a PHOTOSENSITIVE SURFACE 0.45 LEAD CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. 3.1 (15) 4.9 INDEX MARK 1.4 PHOTOSENSITIVE SURFACE 0.5 MAX. 13.9 ± 0.2 12.35 ± 0.1 10.5 ± 0.2 7.5 ± 0.2 1.0 MAX. ACTIVE AREA a 0.45 LEAD CASE S8664-30K 3.0 Type No. a S8664-50K 5.0 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. ➂ S8664-55 5.0 1.5 5.08 (3.0) (5.5) 0.45 5.00.3 MAX.2.0 1.2 1.655.0 9.0 10.6 ACTIVE AREA 5 × 5 0.80 INDEX MARK General tolerance: ±0.2 EPOXY RESIN PHOTOSENSITIVE SURFACE KAPDA0022EA ➃ S8664-1010 5.08 (2 ×) 2 0.5 * From center of active area to center of package 0.5 6.0 0.4 * 1.18 (0.2) 5 1.78 14.5
13.7 ACTIVE AREA
10 × 10 (4 ×) C0.5 PHOTOSENSITIVE SURFACE EPOXY RESIN General tolerance: ±0.2 0.46 0.70 KAPDA0036EA