S8650 HAMAMATSU | Alldatasheet
Document overview
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Technical content
Features
/K6C Flat epoxy coating surface ideal for bonding to scintillator Flatness: ±5 µm /K6C Active area: 10 × 10 mm (Other sizes are also available on request.)
Applications
/K6C Scintillation X-ray detectors /K6C Calorimeters, etc. PHOTODIODE Si PIN photodiode Flat surface ideal for bonding to scintillator I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R Max.100 V Operating temperature Topr -20 to +60 °C Storage temperature Tstg -20 to +80 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm λ=λp -0 .6 6 - A / W BGO: λ=480 nm -0 .3 0 - A / WPhoto sensitivity S CsI (Tl): λ=540 nm -0 .3 7 - A / W Dark current ID VR=70 V - 2 6 nA Cut-off frequency fc λ=780 nm, VR=70 V RL=50 Ω , -3 dB -4 0 -M H z Terminal capacitance Ct VR=70 V, f=1 MHz - 40 - pF Noise equivalent power NEP VR=70 V, λ=λp 3.8 × 10-14 -W / H z 1/2
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KPIN1061E02 Aug. 2006 DN 0.45 LEAD 5.0 1.25 10 1.78 0.7 10.0 10.0 14.5 (1.4) 12.7 -0.5 -0.5 Epoxy resin flatness: ±5 µm Tolerance unless otherwise noted: ±0.2 ACTIVE AREA PHOTOSENSITIVE SURFACE WHITE CERAMIC WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 12001000 0.6 0.7 (Typ. Ta=25 ˚C) REVERSE VOLTAGE (V) DARK CURRENT 100 pA 0.1 1 10 1000 100 1 nA 10 nA 100 nA (Typ. Ta=25 ˚C) REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C, f=1 MHz) TERMINAL CAPACITANCE 10.1 10 pF 100 pF 10 nF 1 nF 10 100 1000 I Dimensional outline (unit: mm) I Spectral response KPINB0254EA I Dark current vs. reverse voltage KPINB00255EA I T erminal capacitance vs. reverse voltage KPINB00256EA KPINA0088EA