S8551 HAMAMATSU | Alldatasheet
Document overview
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Technical content
Features
/K6C Reliable detection improves of ArF excimer laser (λ=193 nm) /K6C Large active area S8551: 5.8 × 5.8 mm S8552: 10 × 10 mm S8553: 18 × 18 mm /K6C Windowless package S8551: TO-8 metal package S8552: 16.5 × 15.0 mm ceramic package S8553: 25.5 × 25.5 mm ceramic package
Applications
/K6C ArF excimer laser detection /K6C Detection of various UV light sources PHOTODIODE Si photodiode Photodiodes for VUV (Vacuum UV) detection S8551, S8552, S8553 I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R Max.5 V Operating temperature Topr -20 to +60 * °C Storage temperature Tstg -55 to +80 * °C * No condensation I Electrical and optical characteristics (Ta=25 °C) Photo sensitivity S λ=193 nm 45 60 - 45 60 - 45 60 - mA/W Terminal capacitance Ct V R=0 V, f=10 kHz - 1.0 - - 4.0 - -8 .0- nF Rise time tr VR=0 V, RL=1 kΩ 10 to 90 % - 2 - - 9 - - 18 - µs S8551, S8552 and S8553 use windowless packages with no protection on the photodiode chip. Always use the following precautions when handling these photodiodes. I Handling precautions G Handle the photodiodes in a clean room. G Never touch the photodiode chip surface and wire bonding. G Wear dust-proof gloves and dust-proof mask. G Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface. G Do not clean the photodiodes by any method other than air blow.
Si photodiode S8551, S8552, S8553 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. Cat. No. KSPD1050E02 Jul. 2002 DN CONVENTIONAL TYPE RELATIVE SENSITIVITY (%) NUMBER OF SHOT [Typ. ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)] 5 × 1060 1 × 107 100 120 S8551, S8552, S8553 CASE 2.9 (15.0) 5.0 ± 0.2 1.4 ANODE TERMINAL MARK PHOTOSENSITIVE SURFACECAP WITHOUT WINDOW 0.5 MAX. LEAD 13.9 ± 0.2 12.35 ± 0.1 10.5 ± 0.1 0.45 7.5 ± 0.2 1.0 MAX. ACTIVE AREA 5.8 × 5.8 ANODE TERMINAL MARK 0.5 LEAD PHOTOSENSITIVE SURFACE 16.5 ± 0.2 0.75 0.3 15.1 ± 0.3 12.5 ± 0.2 13.7 ± 0.3 ACTIVE AREA 10 × 10 PHOTOSENSITIVE SURFACE 18.03.4 25.5 18.0 25.5 10 2.54 1.1 5.0 1.75 -0.6 -0.6 0.45 LEADWHITE CERAMIC ACTIVE AREA 18 × 18 S8551 S8552 S8553 I Variation in sensitivity due to VUV exposure I Dimensional outlines (unit: mm) KSPDA0142EA KSPDB0188EB KSPDA0143EA KSPDA0144EA