S8550 HTSEMI | Alldatasheet
Document overview
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Technical content
- BASE 2. EMITTER 3. COLLECTOR TRANSISTOR(PNP)
FEATURES
z Complimentary to S8050 z Collector current: I C =0.5A MARKING : 2TY MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.5 A P C Collector Power Dissipation 0.3 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = -100 μ A, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E = -100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB = -40V, I E =0 -0.1 μ A Collector cut-off current I CEO V CE = -20V, I B =0 -0.1 μ A Emitter cut-off current I EBO V EB = -3V, I C =0 -0.1 μ A h FE(1) V CE = -1V, I C = -50mA 120 400 DC current gain h FE(2) V CE = -1V, I C = -500mA 50 Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B = -50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B = -50mA -1.2 V Transition frequency f T V CE = -6V, I C = -20mA 30MHz
150 MHz
FE(1) Rank L H Range 120-200 200-350 S8 550 Date:2011/05 www.htsemi.comsemiconductor JinYu S901 2
Date:2011/05 www.htsemi.comsemiconductor JinYu S901 2