S8550 HAMAMATSU | Alldatasheet
Document overview
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Technical content
Features
/K6C High sensitivity and low noise in short wavelength region /K6C Low terminal capacitance /K6C Optimized for blue light detection /K6C Uniform gain and low cross-talk variation between each element
Applications
/K6C Low-light-level photometry in the visible range /K6C Detector systems combined with scintillator APD Si APD array 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 I General ratings Parameter Rating Unit Element size 1.6 × 1.6 (× 32 elements) mm Element pitch 2.3 mm Package Ceramic - Window material Epoxy resin - I Absolute maximum ratings Parameter Symbol Value Unit Operating temperature Topr -20 to +60 °C Storage temperature Tstg -20 to +80 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1000 - nm Peak sensitivity wavelength λp M=50 - 600 - nm Quantum efficiency QE λ=420 nm 60 70 - % Breakdown voltage VBR - 400 500 V Dark current I D per 1 element, M=50 - 10 50 nA Terminal capacitance Ct per 1 element, M=50, f=10 kHz - 10 - pF Gain M - 50 - -
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Si APD array S8550 Cat. No. KAPD1009E02 Jun. 2006 DN 1.27 1.00 (0.5) 15.24 2.6 0.9 19.50 2.30 15.24 1.27 2.30 11.20 1.27 7.62 2.602.30 13 12 11 10987654321 a d e f c b INDEX MARKARRAY 1 PHOTOSENSITIVE SURFACEACTIVE AREA 1.6 × 1.6 (ANODE) CATHODE 1: CATHODE OF ARRAY 1 CATHODE 2: CATHODE OF ARRAY 2 11a 13a CATHODE 1 10b 12b 11c 13c 11d 13d 10e 12e 11f 13f CATHODE 2 ARRAY 2 0.45 200 400 600 800 1000 1200 100 WAVELENGTH (nm) QUANTUM EFFICIENCY (%) (Typ. Ta=25 ˚C) I Quantum efficiency vs. wavelength KAPDB0059EA I Gain vs. reverse voltage KAPDB0063EA I Dimensional outline (unit: mm) KAPDA0023EB REVERSE VOLTAGE (V) GAIN 1000 1000 (Typ. Ta=25 ˚C, λ=420 nm) 100 200 300 400