S8550 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary toS8050 Collector current: IC =0.5A MARKING :S8550 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO -40 V Collector-EmitterV oltage V CEO -25 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC -500 m A Collector Pow er Dissipation PC 625 m W Junction Temperature TJ 150 StorageTemp erature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Symbol Test conditions MIN TYP M A X UNIT Collector-base breakdow n voltage V CBO O IC = 100μA, IE=0 -40 V Collector-emitter breakdow n voltage V CEO O IC = 0.1mA, IB =0 -25 V Emitter-basebreakdow n voltage V EBO O IE= 100μA, IC =0 -5 V Collector cut-off current ICBO O V CB = 40 V , IE=0 0.1 μA Collector cut-off current ICEO O V CE = 20 V , IB =0 0.1 μA Emittercut-offcurrent IEBO O V EB = 5V , IC =0 0.1 μA DC currentgain hFE(1) V CE = 1V , IC = 50mA 85 400 hFE(2) V CE = 1V , IC = 500mA 50 Collector-emitter saturationvoltage V CE (sat) IC =500mA, IB =50mA -0.6 V Base-emittersaturationvoltage V BE (sat) IC =500mA, IB =50mA -1.2 V Transition frequency fT V CE = 6V ,IC =20mA f=30MHz
150 MHz
Rank B C D D1\` Range 120-200 120-200 160-300 300-400 1.S 2.G TO -92 (PNP ) S8550 D
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. S8550 Typical Characteristics