S8543 HAMAMATSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

/K6C Long, narrow active area: 0.7 × 24 mm /K6C Chip carrier package for surface mount (t=1.36 mm) /K6C Excellent position detection characteristic and resolution

Applications

/K6C Position detection of optical pickup head /K6C Distance measurement /K6C Displacement measurement /K6C Position detection, etc. PSD One-dimensional PSD Long, narrow active area and surface mountable package S8543 I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R Max.7 V Operating temperature Topr -10 to +75 °C Storage temperature Tstg -20 to +80 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 320 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm Photo sensitivity S λ=λp -0 .5 8 - A / W Dark current ID VR=5 V - 1 15 nA Rise time tr RL=1 kΩ, VR=5 V λ=780 nm, 10 to 90 % -2 05 0µ s Terminal capacitance Ct VR=5 V, f=10 kHz - 65 130 pF Interelectrode resistance Rie Vb=0.1 V 100 140 180 kΩ Position detection error E λ=900 nm, V R=5 V φ200 µm * 1 - ±50 ±250 µm Position resolution ∆R Io=1 µA, B=1 kHz * 2 -0 .6 - µ m Saturation photocurrent * 3 Ist VR=5 V 200 - - µA *1: Within ±75 % from center to end of active area *2: This is the minimum detectable light spot displacement. The detection limit is indicated by the distance on the photosensit ive surface. The numerical value of the resolution of a position sensor using a PSD is proportional to both the length of the PSD and the noise of the measuring system (resolution deteriorates) and inversely proportional to the photocurrent (incident energy) of the PSD (resolution improves). The resolution value listed in this data sheet was calculated under the following conditions.

  • Frequency bandwidth: 1 kHz
  • Photocurrent: 1 µA
  • Equivalent input noise voltage of circuit: 1 µV (1 kHz)
  • Interelectrode resistance: Typical value (refer to the specification table) *3: This is the upper limit of photocurrent linearity. The upper limit is defined as a point where the photocurrent output devi ates 10 % from the linearity.

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. Cat. No. KPSD1021E01 Jan. 2002 DN 200 400 600 800 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 (Typ. Ta=25 ˚C) WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) I Spectral response I Dark current vs. reverse voltage I T erminal capacitance vs. reverse voltage I Position detection error 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) 1 pF 10 pF 100 pF 1 nF 10 nF TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=10 kHz) (Typ. Ta=25 ˚C, λ=900 nm, spot light size: 200 µm) POSITION ON PSD (mm) -240 +240 POSITION DETECTION ERROR (µm) 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) 1 pA 10 pA 100 pA 1 nA 10 nA DARK CURRENT (Typ. Ta=25 ˚C) 24.0 28.5 ± 0.3 30.5 ± 0.3 36.7 ± 0.35 (R0.25) 2.54 X Y +0.30 1.4-0 (0.1) (1.1) (0.1) (1.0) ACTIVE AREA PHOTOSENSITIVE SURFACE CERAMIC INDEX MARK 0.70.46 4.0 ± 0.2 ANODE (X1) CATHODE (COMMON) ANODE (X2) CATHODE (COMMON) DETAILS +0.3 1.4-0 +0.2 1.0-0 (2.0) (1.0) I Dimensional outline (unit: mm) KPSDA0058EA KPSDB0018EA KPSDB0019EA KPSDB0020EA KPSDB0021EA