S8385

S8385 HAMAMATSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

S8385/S8729 series is a family of large area Si PIN photodiodes molded into a miniature plastic SIP package (75 % smaller in cubic volume than conventional types). Also available are lead forming types that save space when mounted on a PC board. PHOTODIODE Si PIN photodiode SIP plastic package S8385/S8729 series Features Applications /K6C Small plastic package: 4 × 4.8 × 1.8 t mm /K6C 2-pin SIP lead type (lead length: 4.9 mm) /K6C High sensitivity, high speed response /K6C 2 types of spectral response characteristics available S8385, S8729, S8729-10: for visible to infrared range (λ=320 to 1100 nm) S8385-04, S8729-04: for infrared (λ=760 to 1100 nm) /K6C Lead forming type also available (S8729-10) /K6C Active area S8385 series: 2 × 2 mm S8729 series: 2 × 3.3 mm /K6C Barcode scanners /K6C Spatial light transmission /K6C Optical switches /K6C Laser radar, etc. I General ratings / Absolute maximum ratings Absolute maximum ratings Active area size Effective active area Reverse voltage VR Max. Power dissipation P Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline Package (mm) (mm 2) (V) (mV) (°C) (°C) S8385 S8385-04 2 × 2 4 S8729 S8729-04 S8729-10 ➁ Plastic 2 × 3.3 6.6 20 50 -25 to +85 -40 to +100 I Electrical and optical characteristics Photo sensitivity S (A/W)Spectral response range λ Peak sensitivity wavelength λp Short circuit current Isc 100 lx Dark current ID VR=5 V Temperature coefficient of ID TCID Cut-off frequency fc VR=5 V λ=780 nm RL=50 Ω -3 dB Terminal capacitance Ct VR=5 V f=1 MHz NEP λ=λpType No. (nm) (nm) λp 660 nm 780 nm 830 nm (µA) Typ. (nA) Max. (nA) (times/°C ) (MHz) (pF) (W/Hz 1/2) S8385 320 to 1100 0.4 0.48 0.5 4.2 S8729-04 760 to 1100 0.68 - - 0.52 5 1.2 × 10 -14 S8729-10 320 to 1100 960 0.2 2.0 1.15 25 1.1 × 10-14

Si PIN photodiode S8385/S8729 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KPIN1064E04 Apr. 2006 DN I Dimensional outlines (unit: mm) I Spectral response I Dark current vs. reverse voltage KPINB0271EB KPINB0273EA KPINA0090EA KPINA0091EB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 200 400 600 800 WAVELENGTH (nm) 1000 1200 PHOTO SENSITIVITY (A/W) (Typ. Ta=25 ˚C) QE=100 % S8729 S8729-10 S8729-04 S8385-04 S8385 10 pA 100 pA 1 nA 10 nA 1 pA 0.01 0.1 1 10 REVERSE VOLTAGE (V) 100 DARK CURRENT (Typ. Ta=25 ˚C) S8385, S8385-04 S8729, S8729-04, S8729-10 S8385, S8385-04, S8729, S8729-04 S8729-10 5.0 MAX. (INCLUDING BURR) ACTIVE AREA a 4.2 ± 0.2 (INCLUDING BURR) 4.7 * 1.8 5.0 MAX. (INCLUDING BURR) 4.7 * 4.8 * 4.9 ± 0.25 (0.8)(1.25) 0.45 2.54 (2 ×) 10˚ (2 ×) 5˚ 0.250.8 0.5(2 ×) 0.5 (2 ×) 0.4 4.0 * PHOTOSENSITIVE SURFACE 2.0 DEPTH 0.15 MAX. (2 ×) 10° (2 ×) 5° Tolerance unless otherwise noted: ±0.1, ±2˚ Chip position accuracy with respect to the package dimensions marked * Symbol a S8385 S8385-04 2 × 2 2 × 3.3 S8729 S8729-04 5.0 MAX. (INCLUDING BURR) 4.2 ± 0.2 (INCLUDING BURR) 4.7 * 5.0 MAX. (INCLUDING BURR) 4.7 * 4.8 * (2 ×) 10˚ (2 ×) 10˚± 5˚ (2 ×) 5˚ 4.0 * 2.6 ± 0.2 (2 ×) 0.25 (2 ×) 10° (2 ×) 5° Tolerance unless otherwise noted: ±0.1, ±2˚ Chip position accuracy with respect to the package dimensions marked * 0.8 0.5 1.8 (2 ×) 4.5 ± 0.4 ACTIVE AREA 2 × 3.3 0.45 PHOTOSENSITIVE SURFACE 2.0 DEPTH 0.15 MAX. 2.54 (2 ×) 0.5 (2 ×) 0.4 I T erminal capacitance vs. reverse voltage KPINB0272EA 1 pF 10 pF 100 pF 1 nF 100 fF 0.1 1 10 REVERSE VOLTAGE (V) 100 TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=1 MHz) S8729, S8729-04, S8729-10 S8385, S8385-04