DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Built-in timing generator and signal process- ing circuit; 5 V single supply operation www.hamamatsu.com S8377/S8378 series CMOS linear image sensors Wide photosensitive area Pixel pitch: 50 μm (S8377 series) 25 μm (S8378 series) Pixel height: 0.5 mm Image input devices On-chip charge amplifi er with excellent input/output characteristics Optical sensing devices Built-in timing generator allows operation with only start and clock pulse inputs Maximum operating clock frequency: 500 kHz Spectral response range: 200 to 1000 nm 8-pin small package, S8377 and S8378 series are pin compatible.

5 V single power supply operation

Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0.3 to +10 V Gain selection terminal voltage Vg Ta=25 °C -0.3 to +10 V Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +10 V Start pulse voltage V(ST) Ta=25 °C -0.3 to +10 V Operating temperature *1 Topr -20 to +60 °C Storage temperature*1 Tstg -20 to +80 °C *1: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Parameter S8377-128Q S8377-256Q S8377-512Q S8378-256Q S8378-512Q S8378-1024Q Unit Number of pixels 128 256 512 256 512 1024 - Pixel pitch 50 25 μm Pixel height 0.5 mm Number of pins 8- Package Ceramic - Window material Quartz - The S8377/S8378 series is a family of CMOS linear image sensors designed for image input applications. These linear image sensors operate from 5 V single supply with only start and clock pulse inputs, making them easy to use. The signal process- ing circuit has a charge amplifi er with excellent input/output characteristics and allows signal readout at 500 kHz. The photodiodes of the S8377 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 μm. The photo- diodes of the S8378 series also have a height of 0.5 mm but are arrayed at a spacing of 25 μm. The photodiodes are avail- able in 3 different pixel quantities for each series: 128 (S8377-128Q), 256 (S8377-256Q, S8378-256Q), 512 (S8377-512Q, S8378-512Q) and 1024 (S8378-1024Q). Quartz glass is the standard window material. Features Applications

CMOS linear image sensors S8377/S8378 series Recommended terminal voltage Electrical characterisitics Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.75 5 5.25 V Gain selection terminal voltage High gain Vg 0 - 0.4 V Low gain Vdd - 0.25 Vdd Vdd + 0.25 V Clock pulse voltage High level V(CLK) Vdd - 0.25 Vdd Vdd + 0.25 V Low level 0 - 0.4 V Start pulse voltage High level V(ST) Vdd - 0.25 Vdd Vdd + 0.25 V Low level 0 - 0.4 V Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency*2 f(CLK) 0.1 k - 500 k Hz Output impedance*3 Zo - 1 - k Power consumption P -1 5- mW *2: Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, Vg=5 V (low gain) *3: An increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. Connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifi er. Spectral response range  200 to 1000 200 to 1000 nm Peak sensitivity wavelength p - 500 - - 500 - nm Photosensitivity High gain S -2 2- -2 2- V/lx·sLow gain -4 . 4- -4 . 4- Dark current ID - 0.01 0.03 - 0.01 0.03 pA Saturation charge Qsat - 12.5 - - 6.3 - pC Feedback capacitance*4 of charge amplifi er High gain Cf - 1 - - 0.5 - pFLow gain - 5 - - 2.5 - Saturation exposure*6 High gain Esat - 145 - - 145 - mlx·sLow gain - 570 - - 570 - Readout noise High gain Nr mV rms Low gain Photoresponse nonuniformity*7 PRNU - - ±3 - - ±3 % *4: Vg=5 V (low gain), Vg=0 V (high gain) *5: Integration time=100 ms *6: Measured with a tungsten lamp of 2856 K *7: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is defi ned as follows: PRNU= X/X × 100 [%] X: average output of all pixels, X: difference between X and maximum or minimum output

CMOS linear image sensors S8377/S8378 series Spectral response (typical example) Wavelength (nm) Relative sensitivity (%) 200 400 (Ta=25 °C) 100 1000800600 KMPDB0213EC Block diagram Charge amp Clamp circuit CMOS digital shift register Address switch Photodiode array Timing generator 1 2 3 4 5 NN-1 CLK ST Vdd Vss EOS7 Vg3 Video6 KMPDC0150EB

CMOS linear image sensors S8377/S8378 series Timing chart Integration time ST CLK Video ST CLK Video EOS 2n - 1n tpi(ST) tf(ST) t(CLK-ST) tpw(CLK) tvd1 tr(ST) tr(CLK) tf(CLK) tvd2 Vout Parameter Symbol Min. Typ. Max. Unit Start pulse width interval tpi(ST) 1/f × (number of pixels + 2) -- s Start pulse rise and fall times tr(ST), tf(ST) 02 0 3 0 n s Clock pulse width tpw(CLK) 1000 ns - 5 ms - Clock pulse rise and fall times tr(CLK), tf(CLK) 02 0 3 0 n s Clock pulse-start pulse timing t(CLK-ST) 400 ns - 5 ms - Video delay time 1 tvd1 200 300 400 ns Video delay time 2 tvd2 50 150 250 ns Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts opera ting at this timming. Integration time is determined by the interval between the CLK falling edge during the Low period of a start pulse and the CLK falling edge during the Low period of the next start pulse. However, since the charge integration of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. KMPDC0149EC

CMOS linear image sensors S8377/S8378 series Dimensional outlines (unit: mm) S8377-128Q, S8378-256Q * Distance from upper surface of window to photosensitive surface Photosensitive area 6.4 × 0.5 Photosensitive surface 7.87 ± 0.25 3.2 ± 0.3 15.8 ± 0.3 0.51 ± 0.05 7.62 ± 0.13 2.54 ± 0.13 3.0 ± 0.3 5.0 ± 0.5 7.62 ± 0.25 1.3 ± 0.2* 0.25 +0.05 -0.03 KMPDA0150ED S8377-256Q, S8378-512Q * Distance from upper surface of window to photosensitive surface Photosensitive area 12.8 × 0.5 Photosensitive surface 3.0 ± 0.3 7.87 ± 0.25 6.4 ± 0.3 22.2 ± 0.3 2.54 ± 0.13 7.62 ± 0.13 0.51 ± 0.05 5.0 ± 0.5 7.62 ± 0.25 1.3 ± 0.2* 0.25 +0.05 -0.03 KMPDA0151ED

CMOS linear image sensors S8377/S8378 series Pin connections Pin no. Symbol Name of pin Function 1 CLK Clock pulse Pulse input to operate the shift register. The readout time (data rate) equals the clock pulse frequency.

2 ST Start pulse

Starts the shift register operation. Integration time is determined by the interval between the CLK falling edge during the Low period of a start pulse and the CLK falling edge during the Low period of the next start pulse. 3 Vg Gain selection voltage Input of 5 V selects “Low gain” and 0 V selects “High gain”. 4 Vdd Supply voltage 5 V typ.

5 NC Open

6 Video Video Signal output. Positive-going output from 1 V EOS End of scan Negative-going signal output obtained at a timing following the last pixel scan

8 Vss Ground

25.6 × 0.5 * Distance from upper surface of window to photosensitive surface Photosensitive surface 3.0 ± 0.3 7.87 ± 0.25 12.8 ± 0.3 35.0 ± 0.35 7.62 ± 0.13 2.54 ± 0.13 0.51 ± 0.05 5.0 ± 0.5 7.62 ± 0.25 1.3 ± 0.2* 0.25 +0.05 -0.03 KMPDA0152ED S8377-512Q, S8378-1024Q

Cat. No. KMPD1066E09 Feb. 2014 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of February, 2014. CMOS linear image sensors S8377/S8378 series Handling precautions (1) Electrostatic countermeasures Although the CMOS linear image sensor is protected against static electricity, proper electrostatic countermeasures must be provided to prevent device destruction by static electricity. For example, such measures include wearing non-static gloves and clothes, and grounding the work area and tools. (2) Incident window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface , static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) UV exposure The CMOS linear image sensor is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. Related information Precautions ∙ Notice ∙ Image sensors/Precautions www.hamamatsu.com/sp/ssd/doc_en.html