S8050 ZHAOXINGWEI | Alldatasheet
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Collector Current: I C =0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO Collector Current -Continuous I C 0.5 A Collector Dissipation P C 0.3 W Junction Temperature T j 150 Storage Temperature T stg - 5 5t o1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V CBO I C = 100 ìA , I E =0 4 0 V Collector-emitter breakdown voltage V CEO I C =1 m A,I B =0 2 5 V Emitter-base Breakdown voltage V EBO I E = 100 ìA , I C =0 5 V Collector-base cut-off current I CBO V CB =4 0V,I E =0 0 . 1 A Collector-emitter cut-off current I CEO V CE =2 0V,I B =0 0 . 1 A Emitter-base cut-off current I EBO V EB =5V,I C =0 0 . 1 A V CE =1V,I C = 50 mA 120 350 V CE =1V,I C = 500 mA 50 Collector-emitter saturation voltage V CE(sat) I C = 500 mA , I B =5 0m A 0 . 6 V Base-emitter saturation voltage V BE(sat) I C = 500 mA , I B =5 0m A 1 . 2 V Transition frequency f T V CE =6V,I C = 20 mA , f = 30 MHz 150 MHz DC current gain h FE NPN Transistors
Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base-Emitter Saturation Voltage Callector-Emitter Saturation Voltage Fig.4 Current Gain Bandwidth Product