S8050 HTSEMI | Alldatasheet
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TRANSISTOR(NPN)
FEATURES
z Complimentary to S8550 z Collector Current: I C =0.5A MARKING: J3Y MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.5 A P C Collector Dissipation 0.3 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =40 V , I E =0 0.1 μ A Collector cut-off current I CEO V CB =20V , I E =0 0.1 μ A Emitter cut-off current I EBO V EB = 5V , I C =0 0.1 μ A H FE(1) V CE =1V, I C = 50mA 120 350 DC current gain H FE(2) V CE =1V, I C = 500mA 50 Collector-emitter saturation voltage V CE (sat) I C =500 mA, I B = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA 30MHz
150 MHz
FE(1) Rank L H Range 120-200 200-350 SO T -23 1. BASE 2. EMITTER 3. COLLECTOR S8 050 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu