S8050 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complimen tary to S8550 MARKING :J3Y MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 40 V Collector-EmitterV oltage V CE O 25 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 0.5 A Collector Power Dissipation PC 0.3 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Sym bol Test conditions M in T yp M ax U nit Collector-basebreakdow n voltage V CBO IC = 100 μ A, IE=0 40 V Collector-emitter breakdow n voltage V CEO IC =1mA, IB =0 25 V Emitter-base breakdow n voltage V EBO IE=100 μ A, IC =0 5 V Collector cut-off current ICBO V CB =40 V , IE=0 0.1 u A Collector cut-off current ICEO V CB =20V , IE=0 0.1 μ A Emittercut-offcurrent IEBO V EB = 5V , IC =0 0.1 μ A DC current gain H FE(1) V CE =1V, IC = 50mA 120 350 H FE(2) V CE =1V, IC = 500mA 50 Collector-emitter saturationvoltage V CE (sat) IC =500 mA, IB = 50mA 0.6 V Base-emitter saturation voltage V BE (sat) IC =500 mA, IB = 50mA 1.2 V Transition frequency fT V CE =6V, IC = 20m A f=30MHz
150 MHz
(NPN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO S8050
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics FIG.5 - Capacitance & Reverse-Biased Voltage 100 0.1 1 10 100 Reverse-Biased Voltage (V) Capacitance (pF) Cob FIG.4 - Cutoff Frequency & Collector Current 100 1000 1 10 100 1000 Collector Current (mA) Cutoff Frequency (MHz) V CE =10V FIG.3 - On Voltage & Collector Current 0.1 0.01 0.1 1 10 100 1000 Collector Current (mA) On Voltage (V) V BE(ON) @ V CE =1V FIG.1 - Current Gain & Collector Current 100 1000 0.001 0.01 0.1 1 10 100 1000 Collector Current (mA) hFE V CE =1V FIG.2 - Saturation Voltage & Collector Current 0.01 0.1 0.01 0.1 1 10 100 1000 Collector Current (mA) Saturation Voltage (V) V CE(sat) @ I C =10I B S8050