S7686

S7686 HAMAMATSU | Alldatasheet

Document overview

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Technical content

Features

/K6C Spectral response analogous to CIE spectral luminous efficiency Spectral response range: 480 to 660 nm Peak sensitivity wavelength: 550 nm /K6C Ceramic package for reliability /K6C Active area: 2.4 × 2.8 mm /K6C High-speed response: 0.5 µs (V R =0 V, RL=1 kΩ ) /K6C fs value: 8 % Typ. (vertical light input)

Applications

/K6C Illuminometer /K6C Luminance meter PHOTODIODE Si photodiode Photodiode with sensitivity close to spectral luminous efficiency S7686 S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous efficiency) than our conventional visible-compensated sensors (S1133, etc.). I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R Max. 10 V Operating temperature Topr -10 to +60 °C Storage temperature Tstg -20 to +70 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 480 to 660 - nm Peak sensitivity wavelength λp - 550 - nm Photo sensitivity S λ=λp -0 . 3 8- A / W Short circuit current Isc 100 lx, 2856 K - 0.45 - µA Dark current I D VR=1 V - 2 20 pA Rise time tr VR=0 V, RL=1 kΩ - 0.5 - µs Terminal capacitance Ct V R=0 V, f=10 kHz - 200 - pF

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. Si photodiode S7686 Cat. No. KSPD1040E02 Oct. 2002 DN 8.0 CATHODE TERMINAL MARK 6.0 0.6 9 ± 1 1.5 ± 0.2 5.0 ± 0.2 0.1 -0.25 +0.1 -0.3 ACTIVE AREA 2.8 × 2.4 PHOTOSENSITIVE SURFACE FILTER 0.45 LEAD 10 fA 100 fA 1 pA 10 pA 100 pA 1 nA 0.01 0.1 1 10 REVERSE VOLTAGE (V) DARK CURRENT (Typ. Ta=25 ˚C) WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 800 1000 1200 (Typ. Ta=25 ˚C) 0.1 0.2 0.3 0.4 0.6 0.5 QE=100 % I Spectral response I Spectral response (relative value) KSPDB0133EB S7686 (Typ. Ta=25 ˚C) CIE LUMINOUS SPECTRAL EFFICIENCY 300 100 400 500 600 WAVELENGTH (nm) RELATIVE SENSITIVITY (%) 700 800 900 KSPDB0092EB I Dark current vs. reverse voltage I T erminal capacitance vs. reverse voltage I I I I I Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.15) KSPDA0089EA KSPDB0144EA KSPDB0145EA 0.1 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 10 pF 1 nF 100 pF 10 nF 11 0 (Typ. Ta=25 ˚C)