S5106 HAMAMATSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

/K6C Active area S5106: 5 × 5 mm S5107: 10 × 10 mm S7509: 2 × 10 mm S7510: 6 × 11 mm /K6C Ceramic chip carrier package for surface mount /K6C Suitable for solder reflow /K6C High sensitivity

Applications

/K6C Spatial light transmission /K6C Laser radar /K6C Power meter /K6C Bar-code reader PHOTODIODE Si PIN photodiode Chip carrier package for surface mount S5106, S5107, S7509, S7510 I General ratings / Absolute maximum ratings Absolute maximum ratings Active area size Effective active area Reverse voltage VR Max Power dissipation P Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * (mm) (mm 2) (V) (mW) (°C) (°C) S5106 ➀ /R 5 × 5 25 S5107 ➁ /R 10 × 10 100 S7509 ➂ /R 2 × 10 20 S7510 ➃ /R 6 × 11 66 30 50 -40 to +100 -40 to +125 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Spectral response range λ Peak sensitivity wavelength λp Short circuit current Isc 100 lx Dark current ID VR=10 V Temp. coefficient of ID TCID Cut-off frequency fc RL=50 Ω VR=10 V Terminal capacitance Ct f=1 MHz VR=10 V NEP VR=10 V λ=λpType No. (nm) (nm) λp 660 nm780 nm830 nm (µA) Typ. (nA) Max. (nA) (times/°C) (MHz) (pF) (W/Hz 1/2) S5106 27 0.4 5 20 40 1.6 × 10 -14 S5107 110 0.9 10 10 150 2.4 × 10 -14 S7509 22 0.5 5 20 40 1.7 × 10 -14 S7510 320 to 1100 960 0.72 0.45 0.57 0.62 72 1.0 10 1.15 15 80 2.5 × 10 -14 * Window R: Resin coating Note) S5106, S7509: For mass production, order unit is 100 pieces. S5107, S7510: For mass production, order unit is 50 pieces.

Si PIN photodiode S5106, S5107, S7509, S7510 TEMPERATURE COEFFICIENT ( % /˚C) 200 400 600 800 1000 +1.0 +0.5 (Typ.)+1.5 -0.5 WAVELENGTH (nm)WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 200 400 600 0.1 0.2 0.3 0.4 0.5 800 1000 0.6 0.7 0.8 (Typ. Ta=25 ˚C) I Spectral response I Photo sensitivity temperature characteristic KPINB0165EA 1 pA 0.1 1 10 100 10 pA 100 pA 1 nA 10 nA (Typ. Ta=25 ˚C) S7509 S5107, S7510 REVERSE VOLTAGE (V) DARK CURRENT S5106 KPINB0166EA I Dark current vs. reverse voltage I T erminal capacitance vs. reverse voltage 10 pF 0.1 1 10 100 100 pF 1 nF 10 nF (Typ. Ta=25 ˚C, f=1 MHz) REVERSE VOLTAGE (V) TERMINAL CAPACITANCE S5106 S7509 S5107 S7510 KPINB0128EA KPINB0093EC

Si PIN photodiode S5106, S5107, S7509, S7510 1.8 2.54 3.0 0.46 1.26 ± 0.15 (10 ×) 1.2 14.5 ± 0.2 1.8 NC (excluding pins ) Burrs shall protrude no more than 0.3 mm on any side of package. ACTIVE AREA PHOTOSENSITIVE SURFACE SILICONE RESIN 8.80 ± 0.2 1.5 1.27 1.5 2.5 0.46 1.26 ± 0.15 (10 ×) 0.6 SILICONE RESIN NC (excluding pins ) Burrs shall protrude no more than 0.3 mm on any side of package. PHOTOSENSITIVE SURFACE ACTIVE AREA KPINA0002EE KPINA0013EC KPINA0056EBKPINA0055EB NC (excluding pins ) Burrs shall protrude no more than 0.3 mm on any side of package. 6.50 15.35 (4 ×) R0.25 ACTIVE AREA 1.26 ± 0.15 0.46 (18 ×) 0.6 1.27 SILICONE RESIN PHOTOSENSITIVE SURFACE ➂ S7509 ➃ S7510 (4 ×) R0.3 ACTIVE AREA SILICONE RESIN PHOTOSENSITIVE SURFACE 11.5 ± 0.2 14.8 ± 0.2 1.26 ± 0.15 0.46 1.27 (16 ×) 0.6 NC (excluding pins ) Burrs shall protrude no more than 0.3 mm on any side of package. IIIII Dimensional outlines (unit: mm) ➀ S5106 ➁ S5107

Si PIN photodiode S5106, S5107, S7509, S7510 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KPIN1033E04 Aug. 2006 DN G The light input window of this product uses soft silicone resin. Avoid touching the window to keep it from grime and damage that can decrease sensitivity. External force applied to the resin surface may deform or cut off the wires, so do not touch the window to prevent such troubles. G Use rosin flux when soldering, to prevent the terminal lead corrosion. Reflow oven temperature should be at 260 °C maximum for 5 seconds maximum time under the conditions that no moisture absorption occurs. Reflow soldering conditions differ depending on the type of PC board and reflow oven. Carefully check these conditions before use. G Silicone resin swells when it absorbs organic solvent, so do not use any solvent other than alcohol. G Avoid unpacking until you actually use this product to prevent the terminals from oxidation and dust deposits or the coated resin from absorbing moisture. When the product is stored for 3 months while not unpacked or 24 hours have elapsed after unpacking, perform baking in nitrogen atmosphere at 150 °C for 3 to 5 hours or at 120 °C for 12 to 15 hours before use. Precautions for use