S7183 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Clear plastic package /K6C Operation just as easy as using photodiodes /K6C Large output current rivaling that of a phototransistor /K6C Good linearity

Applications

/K6C Energy saving sensors for TV brightness controls, etc. /K6C Light dimmers for liquid crystal panels /K6C Various types of light level measurement PHOTO IC Photo IC diode Linear current amplification of photodiode output S7183, S7184 S7183 and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to 1300 times. Despite a small active area, these photo ICs provide an output nearly equal to that from photodiodes with a 20 × 20 mm active area. Both S7183 and S7184 can be used the same way as a reverse-biased photodiode, and in most cases, they deliver a sufficient output voltage by just connecting a load resistor. /K6C =660 nm LED PULSE DRIVE V O LOAD RESISTANCE R L 7.5 V 90 % 2.5 V 10 % VO tr tf0.1 µF KPICC0041EA I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R -0.5 to 16 V Photocurrent IL 10 mA Forward current I F 10 mA Power dissipation *1 P 250 mW Operating temperature Topr -30 to +80 °C Storage temperature Tstg -40 to +85 °C S7183 260 °C, 3 s, at least 2.5 mm away from package surface -Soldering - S7184 230 °C, 5 s, *1: Derate power dissipation at a rate of 3.3 mW/°C above Ta=25 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 300 to 1000 - nm Peak sensitivity wavelength λp - 650 - nm Operating reverse voltage V R 3- 1 2 V Dark current ID VR=5 V - 0.5 10 nA S7183, 100 lx 0.75 1.0 1.25Photocurrent I L VR=5 V 2856 K S7184, 1000 lx 1.4 1.8 2.2 mA Rise/fall time tr, tf 10 to 90 %, *2 VR=5 V, RL=10 kΩ λ=660 nm - 0.6 - ms *2: Rise/fall time measurement method

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2009 Hamamatsu Photonics K.K. Photo IC diode S7183, S7184 Cat. No. KPIC1022E03 Aug. 2009 DN 200 WAVELENGTH (nm) RELATIVE SENSITIVITY 400 600 800 1000 1200 (Typ. Ta=25 ˚C, VR =5 V) 0.2 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 I Spectral response KPICB0036EA 100 fA -25 AMBIENT TEMPERATURE ( ˚C) DARK CURRENT 0 2 55 07 5 1 0 0 (Typ. VR =5 V) 1 nA 100 pA 10 pA 1 pA 10 nA 100 nA 1 µA 10 µA I Dark current vs. ambient temperature KPICB0042EA 0.01 100 LOAD RESISTANCE ( Ω ) RISE/FALL TIME (ms) 1 k 10 k 100 k 1 M (Typ. Ta=25 ˚C, VR =5 V, λ=560 nm, Vo=2.5 V) 0.1 100 I Rise/fall time vs. load resistance KPICB0043EA CATHODE DRAWING WITHIN DASHED LINE SHOWS SCHEMATIC DIAGRAM OF PHOTO IC DIODE. ANODE REVERSE BIAS POWER SUPPLY LOAD CAPACITANCE FOR LOW-PASS FILTER C L R LLOAD RESISTANCE I Operating circuit example KPICC0018EA The photodiode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance C L in parallel with load resistance RL as a low-pass filter. I Dimensional outlines (unit: mm) 4.3 ± 0.3 (INCLUDING BURR) 4.15 3.0 2.4 R 0.9 0.45 0.610˚ 10˚ 5˚ 0.45 2.54 ± 0.5 0.6 ± 0.3 (0.8) (1.2) 1.43 4.4315 MIN. 1.4 Tolerance unless otherwise noted: ±0.2, ±2˚ Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. 1.7 (INCLUDING BURR) 4.6 +0.6 -0.3 CATHODE ANODE (SPECIFIED AT THE LEAD ROOT) KPICA0017EB KPICA0018EB 4.1 ± 0.2 (INCLUDING BURR) 4.0* 2.54 0.6 0.47 5.0 ± 0.2 (INCLUDING BURR) 4.7* 10˚ 4.8 1.8 0.8 7.0 ± 0.3 0.25 10˚ 0.1 ± 0.1 CATHODE (ANODE) ANODE (ANODE) Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * CENTER OF ACTIVE AREA S7183 S7184 Pins and must be connected to on the PC board. Cut-off frequency fc2πC LR L