S2506 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C S2506-02: Visible to near infrared range S2506-04: Visible-cut S6786 : Visible to near infrared range, high sensitivity, high-speed response S6775, S6967: Visible to near infrared range, high sensitivity, high-speed response, large active area S6775-01, S6967-01: Visible-cut, high sensitivity, high-speed response, large active area /K6C Plastic package: 7 × 7.8 mm /K6C Active area size S2506 series, S6786: 2.77 × 2.77 mm S6775/S6967 series : 5.5 × 4.8 mm

Applications

/K6C Spatial light transmission /K6C Optical switches /K6C Laser radar, etc. PHOTODIODE Si PIN photodiode Plastic SIP (Single In-line Package) S2506/S6775/S6967 series, S6786 S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed response and large active areas, allowing you to choose the optimum type that best matches your application. I General ratings / Absolute maximum ratings Absolute maximum ratings Active area size Effective active area Reverse voltage VR Max. Power dissipation P Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline Package (mm) (mm 2) (V) (mW) (°C) (°C) S2506-02 S2506-04 S6786 ➀ 2.77 × 2.77 7.7 150 S6775 S6775-01 S6967 S6967-01 Plastic 5.5 × 4.8 26.4 -25 to +85 -40 to +100 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Spectral response range λ Peak sensitivity wavelength λp Short circuit current Isc 100 lx Dark current ID Temp. coefficient of ID TCID Cut-off frequency fc RL=50 Ω -3 dB Terminal capacitance Ct f=1 MHz NEP Type No. (nm) (nm) λp 660 nm 780 nm 830 nm (µA) Typ. (nA) Max. (nA) (times/° C) (MHz) (pF) (W/Hz 1/2) S2506-02 320 to 1100 0 . 40 . 4 80 . 5 7 . 3 S6786 320 to 1060 900 0.65 7.5 0.3 *2 5 *2 60 *2 15 *2 1.5 × 10-14 *2 S6775-01 700 to 1100 960 0.68 - 0.48 0.54 21 10 *2 15 *2 40 *2 1.9 × 10-14 *2 S6967 320 to 1060 0.65 0.45 0.55 0.6 26 S6967-01 700 to 1060 900 0.63 - 0.48 0.54 18 0.5 *2 5 *2 1.15 50 *2 50 *2 2.0 × 10-14 *2 *1: VR=12 V *2: VR=10 V

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Si PIN photodiode S2506/S6775/S6967 series, S6786 Cat. No. KPIN1048E02 Jun. 2006 DN I I I I I Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) I Spectral response AMBIENT TEMPERATURE (˚C) DARK CURRENT 1 pA 10 pA 100 pA 1 nA 10 nA 10 µA -20 0 20 40 60 (Typ.) 100 nA 1 µA S6786 (VR =10 V) S6786 S2506-02/-04 S6967/-01 S6775/-01 1 pF 10 pF 100 pF 1 nF 0.1 1 10 100 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=1 MHz) 1 pF 10 pF 100 pF 1 nF 0.1 1 10 100 (Typ. Ta=25 ˚C, f=1 MHz) S6967/-01 S6775/-01 S2506-02/-04 S6786 1.0 0.5 3.5 ± 0.2 7.0 ± 0.2 7.8 ± 0.2 (6.45) a 2.3 ± 0.3 5.08 1.0 1.0 14.3 ± 1 CENTER OF ACTIVE AREA DETAILS OF LEAD ROOT ACTIVE AREA b 2.7 ± 0.20.2 MAX. 0.5 1.4 1.1 INCIDENT LIGHT 5.0 aType No. 3.65 ± 0.2S6775/S6967 series 2.8 ± 0.2 b 5.5 × 4.8 2.77 × 2.77S2506 series S6786 I Dark current vs. ambient temperature I T erminal capacitance vs. reverse voltage KPINB0169EB KPINB0170EB KPINA0084EB 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ RELATIVE SENSITIVITY 40˚ 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ 40˚ 80 % 100 % 20 % 40 % 60 % (Typ. Ta=25 ˚C) I Directivity (S2506-02) KPINB0065EB REVERSE VOLTAGE (V) DARK CURRENT 1 pA 10 pA 100 pA 1 nA 10 nA 0.01 0.1 1 10 100 (Typ. Ta=25 ˚C) S6786 S6967/-01 S2506-02/-04 S6775/-01 I Dark current vs. reverse voltage KPINB0168EB WAVELENGTH (nm) TEMPERATURE COEFFICIENT (% /˚C ) 200 400 600 800 1000 +1.0 +0.5 (Typ.) +1.5 -0.5 I Photo sensitivity temperature characteristic (S2506-02) KPINB0063EC WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 0.1 0.2 0.3 0.4 0.8 0.7 200 400 600 800 1000 (Typ. Ta=25 ˚C) 0.5 0.6 S2506-04 S2506-02 S6786 QE=100 % KPINB0348EA WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 0.1 0.2 0.3 0.4 0.8 0.7 200 400 600 800 1000 (Typ. Ta=25 ˚C) 0.5 0.6 S6967 S6967-01 QE=100 % S6775 S6775-01 KPINB0349EA S2506 series, S6786 S6775/S6967 series