S6337-01 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Large active area: 18 × 18 mm /K6C Excellent uniformity even at wavelengths longer than 1000 nm /K6C High UV sensitivity /K6C Windowless package

Applications

/K6C Precision photometry /K6C Spectral response calibration /K6C Analytical equipment /K6C Trap detector PHOTODIODE Si photodiode Large area photodiode for UV to IR, precision photometry S6337-01 I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R Max.5 V Operating temperature Topr 0 to +60 °C Storage temperature Tstg 0 to +80 °C I Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 190 to 1100 - nm Peak sensitivity wavelength λp - 960 - nm Photo sensitivity S λ=λp -5 3 0- m A / W Short circuit current Isc 100 lx, 2856 K 200 250 - µA Dark current I D VR=10 mV - 50 1000 pA Rise time tr VR=0 V, RL=1 kΩ , λ=660 nm - 7 - µs Terminal capacitance Ct V R=0 V, f=10 kHz - 3.5 - nF Shunt resistance Rsh VR=10 mV 10 200 - MΩ Uniformity * U Within 80 % of active area λ=190 to 1100 nm -- 0 .5 % KSPDB0177EA I Sensitivity uniformity (typical example, λ=1100 nm) POSITION ON ACTIVE AREA (mm) RELATIVE SENSITIVITY (%) (Ta=25 ˚C, spot light size: 35 /K6D m) -10 0 -8 2 -6 4 -4 6 -2 8 1 0 100 120 UNIFORMITY =0.3 % KSPDB0178EA 02-6 4 -4 6 -2 100 120 POSITION ON ACTIVE AREA (mm) RELATIVE SENSITIVITY (%) (Ta=25 ˚C, spot light size: 35 /K6D m) UNIFORMITY=5.6 % * Uniformity = Rs/Rm Rs: Photo sensitivity at any point within 80 % of the active area Rm: Averaged photo sensitivity within 80 % of the active area S6337-01 (18 × 18 mm) S1337-1010BQ (10 × 10 mm)

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Cat. No. KSPD1029E01 May 2004 DN 190 1000 800600400 0.1 0.2 0.3 0.4 0.5 0.6 0.7 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) (Typ. Ta=25 ˚C) QE=100% KSPDB0167EA I Spectral response KSPDB0166EA I Dark current vs. reverse voltage 0.01 0.1 1 10 1 pA 10 pA 100 pA 1 nA 10 nA REVERSE VOLTAGE (V) DARK CURRENT (Typ. Ta=25 ˚C) KSPDB0165EA I T erminal capacitance vs. reverse voltage I Dimensional outline (unit: mm) PHOTOSENSITIVE SURFACE WIRE PROTECTION 18.03.4 25.5 18.0 25.5 (10) 2.54 ± 0.2 1.2 5.0 1.75 -0.6 -0.6 ACTIVE AREA 0.45 LEAD WHITE CERAMIC KSPDA0128EA 0.1 1 10 10 pF 100 pF 1 nF 10 nF REVERSE VOLTAGE (V) TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=1 MHz)