S5971

S5971 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C High-speed response S5971 : 100 MHz (VR =10 V) S5972 : 500 MHz (VR =10 V) S5973 series: 1 GHz (VR =3.3 V) /K6C Low price /K6C High sensitivity /K6C High reliability

Applications

/K6C Optical fiber communications /K6C High-speed photometry /K6C Violet laser detection (S5973-02) PHOTODIODE Si PIN photodiode High-speed photodiodes (S5973 series: 1.5 GHz) I General ratings / Absolute maximum ratings Absolute maximum ratings Package Active area size Effective active area Reverse voltage VR Max. Power dissipation P Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material *1 (mm) (mm) (mm 2) (V) (mW) (°C) (°C) S5971 φ1.2 1.1 S5972 φ0.8 0.5 S5973 ➀ /K S5973-01 ➁ /L S5973-02 ➂ /K TO-18 φ0.4 0.12 20 50 -40 to +100-55 to +125 I Electrical and optical characteristics Photo sensitivity S (A/W) Spectral response range λ Peak sensitivity wavelength λp Short circuit current Isc 100 lx Dark current ID Temp. coefficient of ID TCID Cut-off frequency fc Terminal capacitance Ct f=1 MHz NEP VR=10 V λ=λpType No. (nm) (nm) λp 660 nm 780 nm 830 nm (µA) Typ. (nA) Max. (nA) (times/°C) (GHz) (pF) (W/Hz 1/2) S5971 320 to S5972 800 0.57 0.55 3 *3 3.1 × 10-15 S5973 0.09 S5973-01 0.52 0.44 0.51 0.47 0.42 1.1 × 10-15 *4 S5973-02 320 to 1000 760 0.001 *4 0.1 *4 1.15 1.5 *4 1.6 *4 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: λ=410 nm *3: VR=10 V *4: VR=3.3 V

Si PIN photodiode S5971, S5972, S5973 series 0.1 0.2 0.3 0.4 0.7 200 400 600 (Typ. Ta=25 ˚C ) 800 1000 0.5 0.6 S5973-02 S5972 S5971 S5973/-01 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) I Spectral response I Photo sensitivity temperature characteristics KPINB0157EA TEMPERATURE COEFFICIENT (%/˚C) 200 400 600 800 1000 +1.0 +0.5 (Typ.) +1.5 -0.5 WAVELENGTH (nm) S5972 S5973 SERIES S5971 KPINB0158EA FREQUENCY RELATIVE OUTPUT (dB) -20

1 MHz 10 MHz 100 MHz 1 GHz 10 GHz

-10 +10 (Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω ) S5973 SERIES S5971 (VR =10 V) S5972 (VR =10 V) (VR =3.3 V) I Frequency response I Cut-off frequency vs. reverse voltage KPINB0159EB

10 MHz

100 MHz

1 GHz

10 GHz

(Typ. Ta=25 ˚C, λ=830 nm, R L=50 Ω ) S5971 S5972 S5973 SERIES REVERSE VOLTAGE (V) CUT-OFF FREQUENCY KPINB0160EB

Si PIN photodiode S5971, S5972, S5973 series FIBER-COUPLED SENSITIVITY (A/W) SHIFT FROM LENS CENTER X, Y (mm) (Typ. Ta=25 ˚C, λ=780 nm, NA=0.2) Z Y X 0.6 0.5 0.4 0.3 0.2 0.1 OPTICAL FIBER (CORE DIAMETER: 50 µm) LIGHT SOURCE =780 nm LD Z=0.5 mm 100 fA 1 pA 10 pA 100 pA 0.1 1 REVERSE VOLTAGE (V) DARK CURRENT (Typ. Ta=25 ˚C) 10 100 S5971 S5972 S5973 SERIES I Dark current vs. reverse voltage I Terminal capacitance vs. reverse voltage KPINB0161EA 1 pF 10 pF 100 pF 0.1 1 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=1 MHz) 10 100 S5971 S5972 S5973 SERIES KPINB0162EA I Fiber coupling characteristics (S5973-01) X, Y direction Z direction 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 1 2 5 10 20 Z Y X OPTICAL FIBER (CORE DIAMETER: 50 µm) LIGHT SOURCE =780 nm LD X, Y= 0 mm FIBER-COUPLED SENSITIVITY (A/W) DISTANCE BETWEEN LENS AND FIBER END Z (mm) (Typ. Ta=25 ˚C, λ=780 nm, NA=0.2) KPINB0088EA KPINB0089EA

Si PIN photodiode S5971, S5972, S5973 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Cat. No. KPIN1025E05 Aug. 2006 DN 2.8 3.6 ± 0.2 0.45 LEAD 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 CASE PHOTOSENSITIVE SURFACE WINDOW 3.0 ± 0.2 KPINA0022EB 13.5 0.65 ± 0.15 3.75 ± 0.2 0.45 LEAD 4.6 ± 0.1 5.4 ± 0.2 PHOTOSENSITIVE SURFACE 2.8 2.54 ± 0.2 CASE WINDOW

1.5 LENS

➂ S5973-02 2.8 4.0 ± 0.2 0.45 LEAD 4.6 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 CASE PHOTOSENSITIVE SURFACE WINDOW 2.0 MIN. I Dimensional outlines (unit: mm) ➀ S5971, S5972, S5973 ➁ S5973-01