S5980 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Large active area S5980: 5 × 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm /K6C Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow /K6C Thin package: 1.26 mmt /K6C Photo sensitivity: 0.72 A/W (λ=960 nm)

Applications

/K6C Laser beam axis alignment /K6C Level meters /K6C Pointing devices, etc. PHOTODIODE Si PIN photodiode Multi-element photodiodes for surface mounting S5980, S5981, S5870 I General ratings Parameter Symbol S5980 S5981 S5870 Unit Window material - Resin coating - Gap between elements - 30 µm Active area A φ5.0/4 elements φ10.0/4 elements φ10.0/2 elements mm I Absolute maximum ratings Parameter Symbol S5980 S5981 S5870 Unit Reverse voltage V R Max. 30 V Operating temperature Topr -40 to +100 °C Storage temperature Tstg -40 to +125 °C I Electrical and optical characteristics (Ta=25 °C, per 1 element) Spectral response range λ 320 to 1100 - 320 to 1100 - 320 to 1100 -n m Peak sensitivity wavelength λp 960 - 960 - 960 - nm Photo sensitivity S λ=λp 0.72 - 0.72 - 0.72 - A/W Dark current ID VR=10 V 0.3 2 0.6 4 2 10 nA Temperature coefficient of I D TCID 1.15 - 1.15 - 1.15 - times/°C Cut-off frequency fc VR=10 V, R L=50 Ω , -3 dB 25 - 20 - 10 - MHz Terminal capacitance Ct V R=10 V, f=1 MHz 10 - 35 - 50 - pF Noise equivalent power NEP VR=10 V, λ=λp 1.4 × 10 -14 - 1.9 × 10 -14 - 3.5 × 10 -14 - W/Hz1/2 Note) S5980: For mass production, order unit is 100 pieces. S5981, S5870: For mass production, order unit is 50 pieces. G The light input window of this product uses soft silicone resin. Avoid touching the window to keep it from grime and damage that can decrease sensitivity. External force applied to the resin surface may deform or cut off the wires, so do not touch the window to prevent such troubles. G Use rosin flux when soldering, to prevent the terminal lead corrosion. Reflow oven temperature should be at 260 °C maximum for 5 seconds maximum time under the conditions that no moisture absorption occurs. Reflow soldering conditions differ depending on the type of PC board and reflow oven. Carefully check these conditions before use. G Silicone resin swells when it absorbs organic solvent, so do not use any solvent other than alcohol. G Avoid unpacking until you actually use this product to prevent the terminals from oxidation and dust deposits or the coated resin from absorbing moisture. When the product is stored for 3 months while not unpacked or 24 hours have elapsed after unpacking, perform baking in nitrogen atmosphere at 150 °C for 3 to 5 hours or at 120 °C for 12 to 15 hours before use. Precautions for use

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Si PIN photodiode S5980, S5981, S5870 Cat. No. KPIN1012E02 Aug. 2006 DN 0.03 0.03 10.0 a b d c ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a DETAILS OF ACTIVE AREA 1.8 2.54 3.0 0.46 1.26 ± 0.15 (10 ×) 1.2 14.5 ± 0.2 1.8 Burrs shall protrude no more than 0.3 mm on any side of package. ACTIVE AREA PHOTOSENSITIVE SURFACE SILICONE RESIN 0.03 10.0ab NC ANODE a CATHODE COMMON ANODE b NC NC NC NC NC NC DETAILS OF ACTIVE AREA 1.8 2.54 3.0 0.46 1.26 ± 0.15 (10 ×) 1.2 14.5 ± 0.2 1.8 Burrs shall protrude no more than 0.3 mm on any side of package. ACTIVE AREA PHOTOSENSITIVE SURFACE SILICONE RESIN 8.8 ± 0.2 1.5 1.27 1.5 2.5 0.46 1.26 ± 0.15 0.03 0.03 5.0 a b d c (10 ×) 0.6 SILICONE RESIN Burrs shall protrude no more than 0.3 mm on any side of package. ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a PHOTOSENSITIVE SURFACE DETAILS OF ACTIVE AREA ACTIVE AREA 0.6 0.5 0.4 0.3 0.1 200 400 600 800 1000 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) 0.7 0.8 (Typ. Ta=25 ˚C) 0.2 I Spectral response I Dimensional outlines (unit: mm) KMPDA0036EA 190 400 600 800 1000 +1.0 +0.5 (Typ. )+1.5 -0.5 WAVELENGTH (nm) TEMPERATURE COEFFICIENT (%/˚C) I Photo sensitivity temperature characteristic REVERSE VOLTAGE (V) DARK CURRENT 100 pA 10 nA 1 nA 10 pA 1 pA 0.01 0.1 1 10 100 (Typ. Ta=25 ˚C) S5980 S5981 S5870 I Dark current vs. reverse voltage REVERSE VOLTAGE (V) TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=1 MHz)1 nF 10 pF 1 pF 100 fF 0.1 11 0 100 100 pF S5981 S5870 S5980 I T erminal capacitance vs. reverse voltage KMPDB0125EA KMPDA0113EAKMPDA0037EA KMPDB0122EA KMPDB0123EA KMPDB0124EA S5980 S5870S5981