S5821

S5821 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C High-speed response /K6C Wide spectral response /K6C Low dark current /K6C Low terminal capacitance

Applications

/K6C Optical switch /K6C Automobile optical sensor /K6C General photometry PHOTODIODE Si PIN photodiode High performance, high reliability Si PIN photodiodes S5821 series I General ratings / Absolute maximum ratings Absolute maximum ratings Package Active area size Effective active area Reverse voltage VR Max. Power dissipation P Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * (mm) (mm) (mm 2) (V) (mW) (°C) (°C) S5821 ➀ /K S5821-01 ➁ /L S5821-02 ➂ /K S5821-03 ➃ /L TO-18 φ1.2 1.1 20 50 -40 to +100 -55 to +125 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Photo sensitivity S (A/W) Spectral response range λ Peak sensitivity wavelength λp Short circuit current Isc 100 lx Dark current ID VR=10 V (nA) Temp. coefficient of ID TCID Cut-off frequency fc VR=10 V Terminal capacitance Ct VR=10 V f=1 MHz NEP VR=10 V λ=λpType No. (nm) (nm) λp 660 nm 780 nm 830 nm (µA) Typ. Max. (times/°C) (MHz) (pF) (W/Hz 1/2) S5821 1.1 S5821-01 12 S5821-02 1.1 S5821-03 320 to 1100 960 0.6 0.45 0.52 0.55 0.05 2 1.15 25 3 6.7 × 10 -15 * Window material K: borosilicate glass, L: lens type borosilicate glass

Si PIN photodiode S5821 series 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ RELATIVE SENSITIVITY 40˚ 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ 40˚ 80 % 100 % 20% 40 % 60 % S5821-01 S5821-03 S5821 S5821-02 (Typ. Ta=25 ˚C) 0.1 0.2 0.3 0.4 0.7 200 400 600 (Typ. Ta=25 ˚C ) 800 1000 0.5 0.6 WAVELENGTH (nm) PHOTO SENSITIVITY (A/W) I Spectral response I Directivity KPINB0151EA TEMPERATURE COEFFICIENT (%/ ˚C) 200 400 600 800 1000 +1.0 +0.5 (Typ.) +1.5 -0.5 WAVELENGTH (nm) KPINB0152EA FREQUENCY RELATIVE OUTPUT (dB) -20

1 MHz100 kHz 10 MHz 100 MHz 1 GHz

-10 +10 (Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω , VR =10 V) I Photo sensitivity temperature characteristic I Frequency response KPINB0153EA KPINB0091EA

Si PIN photodiode S5821 series

10 MHz

1 MHz

100 MHz

1 GHz

(Typ. Ta=25 ˚C, λ=830 nm, R L=50 Ω ) REVERSE VOLTAGE (V) CUT-OFF FREQUENCY KPINB0154EA 1 pA 1 nA 10 pA 100 pA 0.1 1 REVERSE VOLTAGE (V) DARK CURRENT (Typ. Ta=25 ˚C) 10 100 I Cut-off frequency vs. reverse voltage I Dark current vs. reverse voltage KPINB0155EA 1 pF 10 pF 100 pF 0.1 1 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=1 MHz) 10 100 KPINB0156EA I T erminal capacitance vs. reverse voltage

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Si PIN photodiode S5821 series Cat. No. KPIN1010E02 Aug. 2006 DN 8.5 2.8 3.6 ± 0.2 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE WINDOW 3.0 ± 0.2 0.45 LEAD KPINA0074EB 0.45 LEAD 4.65 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 2.3 CONNECTED TO CASE KPINA0075EA 2.54 ± 0.2 2.8 3.6 ± 0.2 0.45 LEAD 4.7 ± 0.1 5.4 ± 0.2 CASE PHOTOSENSITIVE SURFACE WINDOW 3.0 ± 0.2 KPINA0022EB CASE 2.54 ± 0.2 0.45 LEAD 4.65 ± 0.1 5.4 ± 0.2 2.8 KPINA0046EA I Dimensional outline (unit: mm) ➀ S5821 ➁ S5821-01 ➂ S5821-02 ➃ S5821-03